bfg541-cnv NXP Semiconductors, bfg541-cnv Datasheet - Page 6

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bfg541-cnv

Manufacturer Part Number
bfg541-cnv
Description
Bfg541 Npn 9 Ghz Wideband Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
In Figs 6 to 9, G
maximum stable gain; G
September 1995
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
I
C
CE
gain
(dB)
gain
(dB)
= 10 mA; V
= 8 V; f = 900 MHz.
Fig.6 Gain as a function of collector current.
25
20
15
10
50
40
30
20
10
5
0
0
10
0
Fig.8 Gain as a function of frequency.
MSG
CE
= 8 V.
UM
20
= maximum power gain; MSG =
MSG
10
2
G UM
max
G max
G UM
40
= maximum available gain.
10
3
G max
60
f (MHz)
I C (mA)
MRA660
MRA658
10
80
4
6
handbook, halfpage
handbook, halfpage
V
I
C
CE
gain
(dB)
gain
(dB)
= 40 mA; V
Fig.7 Gain as a function of collector current.
= 8 V; f = 2 GHz.
25
20
15
10
50
40
30
20
10
5
0
0
10
0
Fig.9 Gain as a function of frequency.
CE
= 8 V.
MSG
20
G UM
10
2
G max
G UM
40
10
3
Product specification
G max
60
f (MHz)
I C (mA)
BFG541
MRA659
MRA661
80
10
4

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