NTB23N03RT4 ONSEMI [ON Semiconductor], NTB23N03RT4 Datasheet - Page 3

• Manufacturer Part Number: NTB23N03RT4
• Description: Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK
• Manufacturer: ONSEMI [ON Semiconductor]

20
16
12
0.20
0.16
0.12
0.08
0.04
8
4
0
10 V
0.8
0.6
1.8
1.6
1.4
1.2
0
0
1
−50
0
Figure 3. On−Resistance versus Drain Current
V
V
DS
GS
Figure 1. On−Region Characteristics
−25
I
V
Figure 5. On−Resistance Variation with
D
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4.5 V
6 V
GS
= 10 V
8 V
5 V
= 6 A
2
= 10 V
T
4
J
, JUNCTION TEMPERATURE (°C)
I
0
D
, DRAIN CURRENT (AMPS)
and Temperature
4
25
Temperature
8
T
T
T
J
J
J
50
= 125°C
= −55°C
= 25°C
6
12
75
V
100
GS
8
16
= 2.5 V
3.5 V
4 V
3 V
125
http://onsemi.com
NTB23N03R
10
20
150
3
10,000
1000
0.20
0.16
0.12
0.08
0.04
100
20
16
12
10
8
4
0
0
0
0
0
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
V
V
GS
V
DS
V
V
DS
GS
= 4.5 V
GS
≥ 10 V
Figure 2. Transfer Characteristics
1
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
4
= 0 V
I
T
D
J
, DRAIN CURRENT (AMPS)
= 125°C
T
T
and Temperature
2
J
J
T
versus Voltage
= 150°C
= 125°C
J
10
= 25°C
8
T
T
T
J
J
J
3
= 125°C
= −55°C
= 25°C
T
J
= −55°C
12
15
4
16
20
5
20
25
6