pbss305nd NXP Semiconductors, pbss305nd Datasheet

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pbss305nd

Manufacturer Part Number
pbss305nd
Description
Low Vcesat Biss Transistors
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS305ND
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS305PD.
I
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
[2]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS305ND
100 V, 3 A NPN low V
Rev. 02 — 7 December 2007
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Automotive applications
Device mounted on a ceramic PCB, Al
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
p
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
300 s;
0.02.
CEsat
FE
) at high I
2
Conditions
open base
single pulse;
t
I
I
O
C
p
C
B
3
= 200 mA
, standard footprint.
= 2 A;
and I
1 ms
(BISS) transistor
CM
C
CEsat
[1]
[2]
Min
-
-
-
-
Typ
-
-
-
73
Product data sheet
Max
100
3
4
95
Unit
V
A
A
m

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pbss305nd Summary of contents

Page 1

... PBSS305ND 100 NPN low V Rev. 02 — 7 December 2007 1. Product profile 1.1 General description NPN low V small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PD. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High efficiency due to less heat generation ...

Page 2

... Ordering information Package Name Description SC-74 plastic surface-mounted package (TSOP6); 6 leads Marking codes Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V (BISS) transistor CEsat Simplified outline Symbol Marking code AG © NXP B.V. 2007. All rights reserved. ...

Page 3

... T amb junction temperature ambient temperature storage temperature O , standard footprint ms Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V (BISS) transistor CEsat Min Max - 100 - 100 - ...

Page 4

... Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint ms Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V (BISS) transistor CEsat 006aaa270 75 125 175 amb 2 2 Min Typ [1] ...

Page 5

... Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS305ND_2 Product data sheet Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V (BISS) transistor CEsat 006aaa271 (s) p 006aaa272 ...

Page 6

... Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS305ND_2 Product data sheet Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V (BISS) transistor CEsat 006aaa273 (s) p 006aaa751 ...

Page 7

... 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V CEsat Min Typ = ...

Page 8

... C Fig 7. Collector current as a function of 006aaa721 V BEsat ( (mA) C (1) T (2) T (3) T Fig 9. Base-emitter saturation voltage as a function of Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V CEsat 300 mA B 270 240 210 180 150 0.4 0.8 1.2 T ...

Page 9

... I Fig 11. Collector-emitter saturation voltage as a 006aaa725 R CEsat ( ) (1) (2) ( (mA) C (1) I (2) I (3) I Fig 13. Collector-emitter saturation resistance as a Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V CEsat (1) (2) ( amb ...

Page 10

... PBSS305ND_2 Product data sheet (probe) oscilloscope 450 9 0 Bon Boff Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope 450 ...

Page 11

... Product data sheet 3.1 2.7 6 3.0 1.7 2.5 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm Packing methods Package Description SOT457 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V (BISS) transistor CEsat 1.1 0 0.6 0 0.40 0.26 0.25 0.10 04-11-08 [1] Packing quantity 3000 ...

Page 12

... Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area solder paste msc422 0.45 1.45 4.45 msc423 © NXP B.V. 2007. All rights reserved. solder lands solder resist occupied area ...

Page 13

... Data sheet status Product data sheet 6: typing error for maximum value information”: updated Product data sheet Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V (BISS) transistor CEsat Change notice Supersedes - PBSS305ND_1 2 footprint amended - - © NXP B.V. 2007. All rights reserved ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V (BISS) transistor CEsat © NXP B.V. 2007. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 7 December 2007 Document identifier: PBSS305ND_2 ...

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