pbss305nx NXP Semiconductors, pbss305nx Datasheet

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pbss305nx

Manufacturer Part Number
pbss305nx
Description
Pbss305nx 80 V, 4.6 A Npn Low Vcesat Biss Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS305NX
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS305PX.
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS305NX
80 V, 4.6 A NPN low V
Rev. 01 — 17 August 2006
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
p
Breakthrough In Small Signal (BISS) transistor in a SOT89
300 s;
0.02.
FE
CEsat
) at high I
C
and I
Conditions
open base
single pulse;
t
I
I
p
C
B
(BISS) transistor
= 200 mA
= 4 A;
1 ms
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
38
Product data sheet
Max
80
4.6
9.2
53
Unit
V
A
A
m

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pbss305nx Summary of contents

Page 1

... PBSS305NX 80 V, 4.6 A NPN low V Rev. 01 — 17 August 2006 1. Product profile 1.1 General description NPN low V (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PX. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High effi ...

Page 2

... Ordering information Package Name Description SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads Marking codes Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V (BISS) transistor CEsat Simplified outline Symbol [1] Marking code *5F © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 3

... O , standard footprint 2.5 P tot (W) (1) 2.0 (2) 1.5 1.0 (3) 0 standard footprint 2 3 Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V (BISS) transistor CEsat Conditions Min Max open emitter - 80 open base - 80 open collector - 5 - 4.6 single pulse ...

Page 4

... Product data sheet Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V (BISS) transistor CEsat Min Typ [ [ [ 006aaa557 2 1 ...

Page 5

... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS305NX_1 Product data sheet Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V (BISS) transistor CEsat 006aaa558 006aaa559 © ...

Page 6

... 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V (BISS) transistor CEsat Min Typ = [ ...

Page 7

... C Fig 6. Collector current as a function of 006aaa622 V BEsat ( (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V CEsat amb collector-emitter voltage; typical values 1 ...

Page 8

... Fig 10. Collector-emitter saturation voltage as a 006aaa626 10 R CEsat ( ) 10 (1) ( (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V CEsat 1 1 (1) (2) ( amb /I = 100 ...

Page 9

... Fig 14. Test circuit for switching times PBSS305NX_1 Product data sheet (probe) oscilloscope 450 12 0. Bon Boff Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope 450 ...

Page 10

... For further information and the availability of packing methods, see PBSS305NX_1 Product data sheet 4.6 4.4 1.8 1.4 2.6 2 0.53 0.40 1.5 3 Dimensions in mm Packing methods Package Description SOT89 8 mm pitch tape and reel Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V (BISS) transistor CEsat 1.6 1.4 4.25 3.75 1.2 0.8 3 0.48 0.44 0.35 0.23 04-08-03 [1] Packing quantity 1000 -115 Section 15. ...

Page 11

... SOT89 standard mounting conditions for reflow soldering Dimensions in mm 6.60 2. 1.50 0.70 5.30 Not recommended for wave soldering Dimensions in mm Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V CEsat 1.70 4.85 0.50 1.20 1 msa442 0.60 (3x) 0.70 (3x) solder lands solder resist occupied area 3.50 7.60 0.50 1.20 3.00 transport direction during soldering © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 12

... PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm ceramic PCB standard 2 3 footprint Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V (BISS) transistor CEsat 2 0.5 mm 3.96 mm 1.6 mm 001aaa235 PCB thickness = 1.6 mm Fig 19. FR4 PCB, mounting pad for ...

Page 13

... Table 9. Revision history Document ID Release date PBSS305NX_1 20060817 PBSS305NX_1 Product data sheet 80 V, 4.6 A NPN low V Data sheet status Change notice Product data sheet - Rev. 01 — 17 August 2006 PBSS305NX (BISS) transistor CEsat Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 17 August 2006 PBSS305NX 80 V, 4.6 A NPN low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. (BISS) transistor CEsat All rights reserved. Date of release: 17 August 2006 Document identifier: PBSS305NX_1 ...

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