pbss3540m NXP Semiconductors, pbss3540m Datasheet
pbss3540m
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pbss3540m Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3540M 40 V, 0.5 A PNP low V Product specification (BISS) transistor CEsat 2003 Aug 12 ...
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... CEO CEsat PINNING PIN handbook, halfpage MARKING CODE DA 2 Product specification PBSS3540M PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION base emitter collector Bottom view MAM469 Fig.1 Simplified outline (SOT883) and symbol. MAX. ...
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... notes 1 and 2 amb note 1 and 3 amb CONDITIONS in free air; notes 1 and 2 in free air; notes 1, 3 and 4 20%, pulse width Product specification PBSS3540M MIN. MAX. UNIT 500 100 mA ...
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... 100 mA; note 100 mA 100 MHz MHz Product specification PBSS3540M MIN. TYP. MAX. UNIT 100 100 nA 200 150 130 mV 200 mV 350 mV 440 <700 m 1 ...
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... I C (mA 20 (1) T amb (2) T amb (3) T amb Fig.5 5 Product specification PBSS3540M (1) (2) ( (mA 150 C. Base-emitter voltage as a function of collector current; typical values. (1) (2) ( (mA) = 150 C ...
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... R CEsat (2) (4) (6) (8) ( mA. ( (10 mA. ( (3) T Fig.7 6 Product specification PBSS3540M ( 20 150 C. amb = 25 C. amb = 55 C. amb Collector-emitter equivalent on-resistance as a function of collector current; typical values ...
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... UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness OUTLINE VERSION IEC SOT883 2003 Aug 0.62 1.02 0.30 0.30 0.35 0.65 0.55 0.95 0.22 0.22 REFERENCES JEDEC JEITA SC-101 7 Product specification PBSS3540M A 0 0.5 scale EUROPEAN PROJECTION SOT883 1 mm ISSUE DATE 03-02-05 03-04-03 ...
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... Product specification PBSS3540M DEFINITION These products are not Philips Semiconductors ...
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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...