pbss2540m NXP Semiconductors, pbss2540m Datasheet
pbss2540m
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pbss2540m Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low V Product specification (BISS) transistor CEsat 2003 Jul 22 ...
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... CEO CEsat PINNING PIN handbook, halfpage MARKING CODE DC 2 Product specification PBSS2540M PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION base emitter collector Bottom view MAM475 Fig.1 Simplified outline (SOT883) and symbol. ...
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... notes 1 and 2 amb note 1 and 3 amb CONDITIONS in free air; notes 1 and 2 in free air; notes 1, 3 and 4 20%, pulse width Product specification PBSS2540M MIN. MAX. UNIT 500 100 mA ...
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... 100 mA; note 100 mA 100 MHz MHz Product specification PBSS2540M MIN. TYP. MAX. UNIT 100 100 nA 200 150 100 mV 200 mV 250 mV 380 <500 m 1 ...
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... I C (mA 20 (1) T (2) T (3) T Fig.5 5 Product specification PBSS2540M (1) (2) ( amb = 25 C. amb = 150 C. amb Base-emitter voltage as a function of collector current; typical values. (1) (2) ( ...
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... V CE ( mA. ( (10 2.5 mA. ( (3) T Fig.7 6 PBSS2540M 20 150 C. amb = 25 C. amb = 55 C. amb Collector-emitter equivalent on-resistance as a function of collector current; typical values. ...
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... UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness OUTLINE VERSION IEC SOT883 2003 Jul 0.62 1.02 0.30 0.30 0.35 0.65 0.55 0.95 0.22 0.22 REFERENCES JEDEC JEITA SC-101 7 Product specification PBSS2540M A 0 0.5 scale EUROPEAN PROJECTION SOT883 1 mm ISSUE DATE 03-02-05 03-04-03 ...
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... Product specification PBSS2540M DEFINITION These products are not Philips Semiconductors ...
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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...