blf4g22-130 NXP Semiconductors, blf4g22-130 Datasheet

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blf4g22-130

Manufacturer Part Number
blf4g22-130
Description
Blf4g22-130 Uhf Power Ldmos Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BLF4G22-130.pdf (13 pages)
1. Product profile
CAUTION
1.1 General description
1.2 Features
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
T
[1]
I
I
I
I
I
I
I
I
I
Mode of operation
2-carrier W-CDMA
case
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
Rev. 01 — 3 July 2007
Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and an I
1150 mA:
Easy power control
Integrated ESD protection
Excellent ruggedness (> 10 : 1 VSWR at 130 W (CW))
High efficiency
High peak power capability (> 190 W)
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 - 64 DPCH.
N
N
N
N
N
= 25 C in a common source class-AB test circuit.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 33 W
Power gain = 13.8 dB
Efficiency = 26 %
ACPR = 41 dBc
IMD3 = 37 dBc
Typical performance
[1]
f
(MHz)
f
f
1
2
= 2135;
= 2145
V
(V)
28
DS
P
(W)
33
L(AV)
G
(dB)
13.5
p
(%)
26
D
Product data sheet
IMD3
(dBc)
37
ACPR
(dBc)
Dq
41
of

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blf4g22-130 Summary of contents

Page 1

... BLF4G22-130; BLF4G22LS-130 UHF power LDMOS transistor Rev. 01 — 3 July 2007 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table common source class-AB test circuit. case Mode of operation ...

Page 2

... NXP Semiconductors 1.3 Applications I RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range. 2. Pinning information Table 2. Pin BLF4G22-130 (SOT502A BLF4G22LS-130 (SOT502B [1] Connected to flange 3. Ordering information Table 3. Type number BLF4G22-130 BLF4G22LS-130 - 4 ...

Page 3

... Symbol Parameter IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF4G22-130 and the BLF4G22LS-130 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF4G22-130_4G22LS-130_1 Product data sheet BLF4G22-130; BLF4G22LS-130 Thermal characteristics Parameter Conditions ...

Page 4

... 1990 MHz. Fig 1. 2-Carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Table MHz 2110 2140 2170 BLF4G22-130_4G22LS-130_1 Product data sheet BLF4G22-130; BLF4G22LS-130 001aag620 40 IMD3 D ACPR (%) (dBc (W) L(AV ...

Page 5

... P = 174 W (= 52.4 dBm) L(1dB) ( 209 W (= 53.2 dBm) L(3db) Fig 5. Pulsed peak power capability; typical values BLF4G22-130_4G22LS-130_1 Product data sheet BLF4G22-130; BLF4G22LS-130 001aag622 IMD3 (dBc (W) L(PEP) (1) I (2) I (3) I ( 2140.1 MHz. ...

Page 6

See Table 9 for list of components. Fig 7. Schematic test circuit for operation at 2.14 GHz C12 V DD C11 L14 C8 C9 C10 DUT L2 ...

Page 7

The components are situated on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) ( serves as a ground plane. See Table 9 for list of components. Fig 8. Component layout for ...

Page 8

... SMD resistor [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) ( BLF4G22-130_4G22LS-130_1 Product data sheet BLF4G22-130; BLF4G22LS-130 Figure 7 and Figure 8) Value 4 8.2 pF 1.5 F ...

Page 9

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 19.61 0.08 0.186 0.505 0.006 0.788 inches 0.135 0.495 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 9. Package outline SOT502A BLF4G22-130_4G22LS-130_1 Product data sheet BLF4G22-130; BLF4G22LS-130 scale 19.96 9.50 9.53 19.94 1.14 5.33 19.66 9.30 9 ...

Page 10

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 19.61 0.08 0.186 0.505 0.006 0.788 inches 0.135 0.495 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 10. Package outline SOT502B BLF4G22-130_4G22LS-130_1 Product data sheet BLF4G22-130; BLF4G22LS-130 scale 19.96 9.50 9.53 19.94 1.14 5.33 19.66 9 ...

Page 11

... VSWR W-CDMA 11. Revision history Table 11. Revision history Document ID BLF4G22-130_4G22LS-130_1 BLF4G22-130_4G22LS-130_1 Product data sheet BLF4G22-130; BLF4G22LS-130 Abbreviations Description Third Generation Partnership Project Adjacent Channel Power Ratio Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Error Vector Magnitude ...

Page 12

... Contact information For additional information, please visit: For sales office addresses, send an email to: BLF4G22-130_4G22LS-130_1 Product data sheet BLF4G22-130; BLF4G22LS-130 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 13

... NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com UHF power LDMOS transistor All rights reserved. Date of release: 3 July 2007 Document identifier: BLF4G22-130_4G22LS-130_1 ...

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