k9f6408u0a Samsung Semiconductor, Inc., k9f6408u0a Datasheet

k9f6408u0a

Manufacturer Part Number

k9f6408u0a

Description

8m X 8 Bit Nand Flash Memory

Manufacturer

Samsung Semiconductor, Inc.

Datasheet

1.K9F6408U0A.pdf (26 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

k9f6408u0a-TCB0

Manufacturer:

SAM

Quantity:

1 235

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

k9f6408u0a-TIB0

Manufacturer:

SAMSUNG

Quantity:

3 450

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Document Title

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the

SAMSUNG branch office near you.

Revision History

K9F6408U0A-TCB0, K9F6408U0A-TIB0

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

Revision No.

8M x 8 Bit NAND Flash Memory

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

0.0

0.1

0.2

0.3

0.4

0.5

History

Initial issue.

1. Revised real-time map-out algorithm(refer to technical notes)

Changed device name

1) KM29U64000AT -> K9F6408U0A-TCB0

2) KM29U64000AIT -> K9F6408U0A-TIB0

Changed the following items

Changed the following item

1. Changed invalid block(s) marking method prior to shipping

2. Changed SE pin description

Number of partial program

in the same page

Input and output timing levels

DC and operating characteristics

- SE is recommended to coupled to GND or Vcc and should not be

- The invalid block(s) information is written the 1st or 2nd page of the

toggled during reading or programming.

--->The invalid block(s) status is defined by the 6th byte in the spare

area. Samsung makes sure that either the 1st or 2nd page of every

Absolute maximum Ratings

invalid block(s) with 00h data

invalid block has

Pin Configuration(23th Pin)

Recommended operating

- Input high voltage(VIH)

Data transfer from Cell

- Voltage on any pin

- Supply voltage

to Register (tR)

Program Time

relative to Vss

conditions

ITEM

non-FFh

data at the column address of 517.

I/O pins : 2.0V(Min.)

Vcc : -0.6V to 4.6V

VccQ : -0.6V to 6V

VccQ+0.3V(Max.)

VccQ : 2.7V(Min.)

Vin : -0.6V to 6V

Except I/O pins :

Vcc+0.3V(Max.)

Before(M-die)

1,000us(Max.)

0.8V and 2.0V

/ 5.5V(Max.)

2.0V(Min.) /

10 Cycles

7us(Max.)

VccQ

Spare Array: 3 Cycles

All inputs : 2.0V(Min.)

Main Array: 2 Cycles

Do not support VccQ

Vcc : -0.6V to 4.6V

Vin : -0.6V to 4.6V

/ Vcc+0.3V(Max.)

After(A-die)

500us(Max.)

After(A-die)

10us(Max.)

1.5V

Vcc

Draft Date

April 10th 1999

July 23th 1999

Sep. 15th 1999

Oct. 20th 1999

Jan. 10th 2000

July 17th 2000

FLASH MEMORY

Remark

Preliminary

Final

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