k9f6408u0a Samsung Semiconductor, Inc., k9f6408u0a Datasheet - Page 6

• Manufacturer Part Number: k9f6408u0a
• Description: 8m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F6408U0A-TCB0:T
DC AND OPERATING CHARACTERISTICS
K9F6408U0A-TCB0, K9F6408U0A-TIB0
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage,All inputs
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Supply Voltage
Supply Voltage
Operating
Maximum DC voltage on input/output pins is V
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Current
Parameter
Sequential Read
Program
Erase
Parameter
Parameter
KM29U64000AIT
KM29U64000AT
SS
Symbol
V
V
CC
CC
SS
Symbol
I
+0.3V which, during transitions, may overshoot to V
OL
I
I
I
I
I
V
V
CC
CC
CC
V
V
SB
SB
I
(R/B)
I
LO
OH
LI
OL
IH
IL
1
2
1
2
3
tRC=50ns,CE=V
CE=V
CE=V
V
V
I
I
V
A
OH
OL
IN
OUT
OL
=0 to 70 C, K9F6408U0A-TIB0:T
=2.1mA
=0 to 3.6V
=-400 A
=0.4V
Symbol
=0 to 3.6V
T
T
IH
CC
V
Min
(Recommended operating conditions otherwise noted.)
V
2.7
BIAS
STG
CC
0
, WP=SE=0V/V
IN
-0.2, WP=SE=0V/V
Test Conditions
6
IL
-
-
-
-
, I
OUT
CC
=0mA
Typ.
3.3
0
CC
-0.6 to + 4.6
-0.6 to + 4.6
-10 to + 125
-40 to + 125
-65 to + 150
Rating
CC
+2.0V for periods <20ns.
Min
-0.3
2.0
2.4
A
8
-
-
-
-
-
-
-
-
=-40 to 85 C)
FLASH MEMORY
Max
3.6
0
Typ
10
10
10
10
10
-
-
-
-
-
-
-
V
CC
Max
0.8
0.4
20
20
20
50
1
10
10
Unit
-
-
+0.3
V
V
C
C
Unit
V
V
Unit
mA
mA
V
A