BU415B ISC [Inchange Semiconductor Company Limited], BU415B Datasheet
BU415B
Manufacturer Part Number
BU415B
Description
isc Silicon NPN Power Transistor
Manufacturer
ISC [Inchange Semiconductor Company Limited]
Datasheet
1.BU415B.pdf
(2 pages)
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INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Sustaining Voltag-
·High Switching Speed
APPLICATIONS
·Designed for TV horizontal output and high power switching
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
: V
applications.
V
V
V
T
I
P
T
CBO
CEO
EBO
I
CM
stg
C
C
J
CEO(SUS)
Silicon NPN Power Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Repetitive
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
= 400V(Min)
C
=25℃
PARAMETER
a
=25
℃)
-65~200
VALUE
900
400
120
200
12
15
6
UNIT
℃
℃
W
V
V
V
A
A
isc
Product Specification
BU415B
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BU415B Summary of contents
Page 1
... Emitter-Base Voltage EBO I Collector Current-Continuous C I Collector Current-Peak Repetitive CM Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 900 V 400 120 W ℃ 200 ℃ -65~200 isc Product Specification BU415B ...
Page 2
... BE Current Gain FE isc Website：www.iscsemi.cn isc CONDITIONS I = 100mA ; 1mA ; 400V Product Specification BU415B MIN TYP. MAX UNIT 400 0.1 mA 0.1 mA 3 ...