BD314 ISC [Inchange Semiconductor Company Limited], BD314 Datasheet
BD314
Manufacturer Part Number
BD314
Description
isc Silicon PNP Power Transistor
Manufacturer
ISC [Inchange Semiconductor Company Limited]
Datasheet
1.BD314.pdf
(2 pages)
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INCHANGE Semiconductor
isc
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-h
·Collector-Emitter Saturation Voltage-
·Complement to Type BD313
APPLICATIONS
·Designed for high quality amplifiers operating up to 60 watts
ABSOLUTE MAXIMUM RATINGS(T
THERMAL CHARACTERISTICS
isc Website：www.iscsemi.cn
SYMBOL
SYMBOL
: V
R
into 4 ohm load.
V
V
V
T
I
P
T
th j-c
CBO
CEO
EBO
I
CM
I
stg
C
B
C
J
CE(sat
B
Silicon PNP Power Transistor
)= -1.0 V(Max)@ I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation@T
Junction Temperature
Storage Temperature
Thermal Resistance,Junction to Case
FE
PARAMETER
PARAMETER
= 25(Min.)@I
C
= -5A
C
a
=25℃)
= -4A
C
=25℃
-65~200
VALUE
1
200
115
-80
-80
-10
-20
MAX
-5
-4
1.52
UNIT
UNIT
℃/W
W
℃
℃
V
V
V
A
A
A
isc
Product Specification
BD314
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BD314 Summary of contents
Page 1
... Junction Temperature J Storage Temperature T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case R th j-c isc Website：www.iscsemi.cn = -4A C =25℃) a VALUE UNIT - - =25℃ 115 W C ℃ 200 ℃ -65~200 MAX UNIT ℃/W 1.52 1 isc Product Specification BD314 ...
Page 2
... CONDITIONS I = -200mA -5A -0. -5A -0. -4A - -80V -7.0V -4A - -10A - -0.5A -10V;f=1.0MHz Product Specification BD314 MIN MAX UNIT -80 V -1.0 V -1.8 V -1.5 V -1 MHz ...