BD750A ISC [Inchange Semiconductor Company Limited], BD750A Datasheet

BD750A

Manufacturer Part Number

BD750A

Description

isc Silicon PNP Power Transistors

Manufacturer

ISC [Inchange Semiconductor Company Limited]

Datasheet

1.BD750A.pdf (2 pages)

Current page: 1 of 2
Download datasheet (83Kb)

INCHANGE Semiconductor

isc

DESCRIPTION

· Collector-Emitter Sustaining Voltage-

·High Power Dissipation

·Complement to Type BD751/751A

APPLICATIONS

·Designed for high voltage and high power amplifier

ABSOLUTE MAXIMUM RATINGS(T

THERMAL CHARACTERISTICS

isc Website：www.iscsemi.cn

SYMBOL

CEO(SUS)

: V

applications.

EBO

th j-c

CEV

stg

CEO(SUS)

Silicon PNP Power Transistors

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation@T

Junction Temperature

Storage Temperature

Thermal Resistance,Junction to Case

= -90V(Min)- BD750

= -120V(Min)- BD750A

PARAMETER

BD750

BD750A

BD750

BD750A

=25℃)

=25℃

-65~200

VALUE

0.875

MAX

-100

-130

-120

200

-90

-20

-7

-5

UNIT

℃/W

℃

isc

Product Specification

BD750/750A

Related parts for BD750A

BD750A Summary of contents

Page 1

... INCHANGE Semiconductor isc Silicon PNP Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage -90V(Min)- BD750 CEO(SUS) = -120V(Min)- BD750A ·High Power Dissipation ·Complement to Type BD751/751A APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T SYMBOL PARAMETER V Collector-Emitter Voltage CEV ...

Page 2

... B B BD750A I = -5A -0. BD750 V = -100V;V = -1.5V CEV BE (off) BD750A V = -130V;V = -1.5V CEV BE (off -7V BD750 I = -7. - BD750A -0. -10V isc Product Specification BD750/750A MIN TYP. -90 -120 1MHz test MAX UNIT V -1.5 V -1.0 -1.8 V -1.8 -0 ...

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