BD313 ISC [Inchange Semiconductor Company Limited], BD313 Datasheet

BD313

Manufacturer Part Number

BD313

Description

isc Silicon NPN Power Transistor

Manufacturer

ISC [Inchange Semiconductor Company Limited]

Datasheet

1.BD313.pdf (2 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BD313

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INCHANGE Semiconductor

isc

DESCRIPTION

·Excellent Safe Operating Area

·DC Current Gain-h

·Collector-Emitter Saturation Voltage-

·Complement to Type BD314

APPLICATIONS

·Designed for high quality amplifiers operating up to 60 watts

ABSOLUTE MAXIMUM RATINGS(T

THERMAL CHARACTERISTICS

isc Website：www.iscsemi.cn

SYMBOL

: V

into 4 ohm load.

th j-c

CBO

CEO

EBO

stg

CE(sat

Silicon NPN Power Transistor

)= 1.0 V(Max)@ I

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation@T

Junction Temperature

Storage Temperature

Thermal Resistance,Junction to Case

PARAMETER

= 25(Min.)@I

= 5A

=25℃)

= 4A

=25℃

-65~200

VALUE

200

115

MAX

1.52

UNIT

℃/W

℃

isc

Product Specification

BD313

Related parts for BD313

BD313 Summary of contents

Page 1

... Junction Temperature J Storage Temperature T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case R th j-c isc Website：www.iscsemi. =25℃) a VALUE UNIT =25℃ 115 W C ℃ 200 ℃ -65~200 MAX UNIT ℃/W 1.52 1 isc Product Specification BD313 ...

Page 2

... CONDITIONS I =200mA ; 80V 7.0V 4A 10A 0. 10V;f=1.0MHz Product Specification BD313 MIN MAX UNIT 80 V 1.0 V 1.8 V 1.5 V 1 MHz ...

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