BD751A ISC [Inchange Semiconductor Company Limited], BD751A Datasheet

BD751A

Manufacturer Part Number

BD751A

Description

isc Silicon NPN Power Transistors

Manufacturer

ISC [Inchange Semiconductor Company Limited]

Datasheet

1.BD751A.pdf (2 pages)

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Download datasheet (83Kb)

INCHANGE Semiconductor

isc

DESCRIPTION

· Collector-Emitter Sustaining Voltage-

·High Power Dissipation

·Complement to Type BD750/750A

APPLICATIONS

·Designed for high voltage and high power amplifier

ABSOLUTE MAXIMUM RATINGS(T

THERMAL CHARACTERISTICS

isc Website：www.iscsemi.cn

SYMBOL

CEO(SUS)

: V

applications.

EBO

th j-c

CEV

stg

CEO(SUS)

Silicon NPN Power Transistors

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation@T

Junction Temperature

Storage Temperature

Thermal Resistance,Junction to Case

= 90V(Min)- BD751

= 120V(Min)- BD751A

PARAMETER

BD751

BD751A

BD751

BD751A

=25℃)

=25℃

-65~200

VALUE

0.875

MAX

100

130

120

200

UNIT

℃/W

℃

isc

Product Specification

BD751/751A

Related parts for BD751A

BD751A Summary of contents

Page 1

... INCHANGE Semiconductor isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage 90V(Min)- BD751 CEO(SUS) = 120V(Min)- BD751A ·High Power Dissipation ·Complement to Type BD750/750A APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T SYMBOL PARAMETER V Collector-Emitter Voltage CEV ...

Page 2

... C B BD751A BD751 V = 100V;V = 1.5V CEV BE (off) BD751A V = 130V;V = 1.5V CEV BE (off 7V BD751 BD751A 0. 10V isc Product Specification BD751/751A MIN TYP. 90 120 1MHz test MAX UNIT V 1.5 V 1.0 1.8 V 1.8 0.5 mA ...

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