DN2530N3 SUTEX [Supertex, Inc], DN2530N3 Datasheet

DN2530N3

Manufacturer Part Number

DN2530N3

Description

N-Channel Depletion-Mode Vertical DMOS FETs

Manufacturer

SUTEX [Supertex, Inc]

Datasheet

1.DN2530N3.pdf (4 pages)

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Ordering Information

Features

❏ High input impedance

❏ Low input capacitance

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

Applications

❏ Normally-on switches

❏ Solid state relays

❏ Converters

❏ Linear amplifiers

❏ Constant current sources

❏ Power supply circuits

❏ Telecom

Absolute Maximum Ratings

12/13/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

Distance of 1.6 mm from case for 10 seconds.

Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

300V

DSX

DGX

(max)

12Ω

DS(ON)

200mA

(min)

DSS

N-Channel Depletion-Mode

Vertical DMOS FETs

-55°C to +150°C

DN2530N3

Order Number / Package

TO-92

300°C

± 20V

DGX

DSX

TO-243AA*

DN2530N8

Advanced DMOS Technology

Not recommended for new designs. Please use DN3535 or

DN3545 instead.

These depletion-mode (normally-on) transistors utilize an ad-

vanced vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transis-

tors and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

Note: See Package Outline section for dimensions.

TO-243AA

(SOT-89)

Where ❋ = 2-week alpha date code

Product marking for TO-243AA:

DN5T❋

TO-92

S G D

DN2530

Related parts for DN2530N3

DN2530N3 Summary of contents

Page 1

... Vertical DMOS FETs Order Number / Package I DSS (min) TO-92 TO-243AA* DN2530N3 DN2530N8 Advanced DMOS Technology Not recommended for new designs. Please use DN3535 or DN3545 instead. These depletion-mode (normally-on) transistors utilize an ad- vanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces ...

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DN2530N3 SUTEX [Supertex, Inc], DN2530N3 Datasheet

DN2530N3

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DN2530N3 Summary of contents

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