CY7C1049-20VM CYPRESS [Cypress Semiconductor], CY7C1049-20VM Datasheet - Page 5

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CY7C1049-20VM

Manufacturer Part Number
CY7C1049-20VM
Description
512K x 8 Static RAM
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
Switching Characteristics
Data Retention Characteristics
Document #: 38-05063 Rev. **
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
V
I
t
t
Notes:
Parameter
10. No input may exceed V
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
CCDR
CDR
R
9.
Parameter
DR
[9]
t
[3]
r
< 3 ns for the -12 and -15 speeds. t
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
[7]
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
for Data Retention
CC
+ 0.5V.
[4]
r
Description
[6]
[6]
< 5 ns for the -20 ns and slower speeds.
[5, 6]
[6]
[5, 6]
[5, 6]
Over the Operating Range (continued)
Description
PRELIMINARY
Over the Operating Range
Com’l
Ind’l
Military
L V
CE > V
V
CC
IN
> V
= V
CC
CC
Min.
DR
20
20
13
13
13
Conditions
3
0
3
0
0
0
9
0
3
7C1049-20
– 0.3V
– 0.3V or V
= 3.0V,
Max.
20
20
20
8
8
8
8
[10]
IN
< 0.3V
Min.
25
25
15
15
15
10
5
0
5
0
0
0
0
5
7C1049-25
Min.
2.0
t
RC
0
Max.
CY7C1049
25
25
10
10
10
25
10
Max
200
Page 5 of 10
1
2
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
mA
mA
ns
ns
V
A

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