CY8C34_11 CYPRESS [Cypress Semiconductor], CY8C34_11 Datasheet - Page 100

• Manufacturer Part Number: CY8C34_11
• Manufacturer: CYPRESS [Cypress Semiconductor]

11.4 Memory
Specifications are valid for –40 °C ≤ T
except where noted.
11.4.1 Flash
Table 11-52. Flash DC Specifications
Table 11-53. Flash AC Specifications
11.4.2 EEPROM
Table 11-54. EEPROM DC Specifications
Document Number: 001-53304 Rev. *K
T
T
T
Parameter
Parameter
Parameter
WRITE
ERASE
BULK
Erase and program voltage
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (16 KB to 64 KB)
Sector erase time (8 KB to 16 KB)
Total device program time, including
JTAG or SWD, and other overhead
Flash data retention time, retention
period measured from last erase cycle
Erase and program voltage
Description
Description
Description
A
≤ 85 °C and T
Figure 11-61. Clock to Output Performance
J
V
Average ambient temp.
T
cycles
Average ambient temp.
T
cycles
A
A
≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
DDD
≤ 55 °C, 100 K erase/program
≤ 85 °C, 10 K erase/program
pin
Conditions
Conditions
Conditions
PSoC
1.71
1.71
Min
Min
Min
20
10
–
–
–
–
–
–
®
3: CY8C34 Family
Typ
Typ
Typ
15
10
–
5
–
–
–
–
–
–
Data Sheet
Max
Max
Max
5.5
5.5
20
13
35
15
7
5
–
–
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Seconds
Units
Units
years
years
Units
ms
ms
ms
ms
ms
V
V
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