TC2381 TRANSCOM [Transcom, Inc.], TC2381 Datasheet
TC2381
Manufacturer Part Number
TC2381
Description
Low Noise and Medium Power Packaged GaAs FETs
Manufacturer
TRANSCOM [Transcom, Inc.]
Datasheet
1.TC2381.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC2381
Manufacturer:
Transcom
Quantity:
5 000
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
ABSOLUTE MAXIMUM RATINGS (T
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
* For the tight control of the pinch-off voltage range, we divide TC2381 into 3 model numbers to fit customer design requirement
The TC2381 is a high performance field effect transistor housed in a ceramic micro-x package with TC1301
PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device
suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
Symbol
(1)TC2381P0710 : Vp = -0.7V to -1.0V (2)TC2381P0811 : Vp = -0.8V to -1.1V (3)TC2381P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
BV
0.9 dB Typical Noise Figure at 12 GHz
High Associated Gain: Ga = 9 dB Typical at 12 GHz
24.5 dBm Typical Power at 12 GHz
10 dB Typical Linear Power Gain at 12 GHz
Breakdown Voltage : BV
Lg = 0.25 m, Wg = 600 m
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
Micro-X Metal Ceramic Package
P
I
Symbol
NF
R
G
V
G
g
DSS
1dB
m
DGO
T
th
L
P
V
V
T
a
I
I
P
P
STG
DS
GS
CH
DS
GS
in
T
Noise Figure at V
Associated Gain at V
Output Power at 1dB Gain Compression Point, f = 12GHz V
Linear Power Gain, f = 12GHz V
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Parameter
Low Noise and Medium Power Packaged GaAs FETs
DS
= 4 V, I
DS
DGO
DS
DS
= 4 V, I
= 2 V, I
= 2 V, V
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
DS
9 V
= 50 mA, f = 12GHz
DS
D
= 50 mA, f = 12GHz
DS
GS
= 1.2mA
- 65 C to +175 C
CONDITIONS
DGO
= 6 V, I
DS
= 0 V
= 2 V, V
= 0.3mA
800 mW
600 A
Rating
24dBm
175 C
-3.0 V
A
7.0 V
I
=25 C)
A
DSS
Phone: 886-6-5050086
DS
=25 C)
= 80 mA
GS
= 0 V
P 1 / 4
DS
TYPICAL NOISE PARAMETERS (T
V
= 6 V, I
DS
Frequency
= 4 V, I
10
12
14
16
18
2
4
6
8
DS
= 80 mA
DS
= 50 mA
PHOTO ENLARGEMENT
NF
0.36
0.48
0.59
0.70
0.82
0.93
1.05
1.16
1.27
opt
Fax: 886-6-5051602
MIN
23.5
7.5
9
9
19.7
16.6
14.3
12.7
11.7
10.9
10.4
G
9.8
9.0
A
TYP
-1.0*
24.5
180
200
0.9
10
12
75
9
MAG
0.80
0.67
0.56
0.49
0.46
0.45
0.46
0.47
0.48
Γ
MAX
opt
1.2
REV4_20070504
ANG
-162
-141
120
148
174
15
39
64
92
TC2381
A
=25 C)
UNIT
Volts
Volts
dBm
mA
C/W
mS
dB
dB
dB
Rn/50
0.28
0.18
0.15
0.12
0.09
0.06
0.04
0.04
0.07
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TC2381 Summary of contents
Page 1
... Storage Temperature STG * For the tight control of the pinch-off voltage range, we divide TC2381 into 3 model numbers to fit customer design requirement (1)TC2381P0710 : Vp = -0.7V to -1.0V (2)TC2381P0811 : Vp = -0.8V to -1.1V (3)TC2381P0912 : Vp = -0.9V to -1.2V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. ...
Page 2
... Fax: 886-6-5051602 TC2381 REV4_20070504 0 ANG 98.72 81.74 69.74 59.19 52.92 51.32 ...
Page 3
... Fax: 886-6-5051602 TC2381 REV4_20070504 0 ANG 96.01 81.71 69.99 62.63 58.72 ...
Page 4
... Standard Reel Quantity th TRANSCOM, INC., 90 Dasoong 7 Web-Site: www.transcominc.com.tw (Unit: mm) 2.0 +/- 0.05 4.0 0.5 MIN Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 0.5 +0.1/-0.0 A 1.75 5.5 +/- 0.05 12.0 +/- 0.3 A 7” 1000 Fax: 886-6-5051602 TC2381 REV4_20070504 ...