TC2471 Transcom, Inc., TC2471 Datasheet

TC2471

Manufacturer Part Number

TC2471

Description

Low-cost Packaged Phemt Gaas Power Fets

Manufacturer

Transcom, Inc.

Datasheet

1.TC2471.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TC2471

Manufacturer:

M/A-COM

Quantity:

5 000

Current page: 1 of 3
Download datasheet (191Kb)

FEATURES

DESCRIPTION

ELECTRICAL SPECIFICATIONS (T

Note: *

TRANSCOM, INC., 90 Dasoong 7

Web-Site: www.transcominc.com.tw

Symbol

PAE

IP3

0.5 W Typical Output Power at 6 GHz

14 dB Typical Linear Power Gain at 6 GHz

High Linearity: IP3 = 37 dBm Typical at 6 GHz

High Power Added Efficiency:

Suitable for High Reliability Application

Breakdown Voltage: BV

Lg = 0.35 m, Wg = 1.2 mm

Tight Vp ranges control

High RF input power handling capability

100 % DC Tested

Low Cost Ceramic Package

DSS

Nominal PAE of 40 % at 6 GHz

1dB

DGO

The TC2471 is packaged with the TC1401 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The

Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100% DC

tested to assure consistent quality. Typical applications include high d ynamic range power amplifiers for

commercial and military high performance power applications .

(1)TC2471P1519 : Vp = -1.5V to -1.9V (2)TC2471P1620 : Vp = -1. 6V to -2.0V (3)TC2471P1721 : Vp = -1.7V to -2.1V

For the tight control of the pinch-off voltage range, we divide TC2471 into 3 model numbers to fit customer design requirement

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.

SCL

Output Power at 1dB Gain Compression Point , f = 6GHz V

Linear Power Gain, f = 6GHz V

Intercept Point of the 3

Power Added Efficiency at 1dB Compression Power, f = 6GHz

Saturated Drain-Source Current at V

Transconductance at V

Pinch-off Voltage at V

Drain-Gate Breakdown Voltage at I

Thermal Resistance

: Output Power of Single Carrier Level

0.5 W Low-Cost Packaged PHEMT GaAs Power FETs

DGO

= 2 V, I

-order Intermodulation, f = 6GHz V

= 2 V, V

Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

15 V

= 2.4 mA

= 8 V, I

DGO

= 0 V

= 2 V, V

=0.6 mA

=25 C)

CONDITIONS

= 120 mA

Phone: 886-6-5050086

= 0 V

P 1 / 3

= 8 V, I

= 120 mA

= 120 mA, *P

Fax: 886-6-5051602

PHOTO ENLARGEMENT

SCL

= 14 dBm

MIN

26.5

-1.7**

TYP

300

200

REV4_20070906

TC2471

MAX UNIT

Volts

dBm

C/W

Related parts for TC2471

TC2471 Summary of contents

Page 1

... SCL ** For the tight control of the pinch-off voltage range, we divide TC2471 into 3 model numbers to fit customer design requirement (1)TC2471P1519 : Vp = -1.5V to -1.9V (2)TC2471P1620 : -2.0V (3)TC2471P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. th TRANSCOM, INC ...

Page 2

... Swp Min 2GHz S12 S22 MAG ANG MAG 0.0387 4.89 0.4708 0.0399 -13.26 0.4977 0.0403 -26.19 0.5295 0.0415 -38.13 0.5523 0.0462 -48.77 0.5654 0.0538 -63.69 0.5626 0.0652 -86.78 0.5367 0.0752 -117.25 0.4441 Fax: 886-6-5051602 TC2471 REV4_20070906 Rating 8 V 120 mA ANG -84.58 -109.23 -128.52 -145.68 -161.74 -177.61 164.94 144.53 ...

Page 3

... Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 SIDES Bottom Side(Source) A TCXXXX Section A-A Fax: 886-6-5051602 TC2471 REV4_20070906 ...

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