tc1504n Transcom, Inc., tc1504n Datasheet

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tc1504n

Manufacturer Part Number
tc1504n
Description
1w High Linearity And High Efficiency Gaas Power Fets
Manufacturer
Transcom, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC1504N
Manufacturer:
RFMD
Quantity:
5 000
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
Note:
* P
Symbol
BV
l 1W Typical Power at 12 GHz
l Linear Power Gain: G
l High Linearity: IP3 = 40 dBm Typical at 12 GHz
l Non-Via Hole Source for Single-Bias Application
l Suitable for High Reliability Application
l Breakdown Voltage: BV
l Lg = 0.25 m, Wg = 2.4 mm
l
l
l
l 100 % DC Tested
The TC1504N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity
and high Power Added Efficiency. The device is processed without via -holes for single-bias applications. The
short gate length enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure
consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
Backside gold plating is compatible with standard AuSn die -attach. Typical application include commercial and
military high performance power amplifiers
PAE
P
IP3
I
G
g
V
R
DSS
SCL
1dB
DGO
m
High Power Added Efficiency: Nominal PAE of 43% at 12 GHz
Tight Vp ranges control
High RF input power handling capability
L
P
th
TRANSCOM, INC.,
Web-Site:
: Output Power of Single Carrier Level.
Output Power at 1dB Gain Compression Point , f = 12 GHz V
Linear Power Gain, f = 12 GHz V
Intercept Point of the 3
Power Added Efficiency at 1dB Compression Power, f = 12 GHz
Saturated Drain -Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
www.transcominc.com.tw
1W High Linearity and High Efficiency GaAs Power FETs
90 Dasoong 7
L
= 9 dB Typical at 12 GHz
DS
DGO
rd
DS
= 2 V, I
-order Intermodulation, f = 12 GHz V
= 2 V, V
13.5 V
th
D
Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan
= 4.8 mA
DS
GS
DGO
= 8 V, I
= 0 V
DS
= 2 V, V
=1.2 mA
A
.
=25 C)
Conditions
DS
= 240 mA
Phone: 886-6-5050086
GS
= 0 V
1 / 6
DS
DS
=8 V, I
= 8 V, I
DS
DS
=240 mA,*P
PHOTO ENLARGEMENT
= 240 mA
SCL
=17 dBm
MIN
29.5
13.5
Fax: 886-6-5051602
TC1504N
TYP
720
520
-1.7
30
40
43
15
12
9
REV2_20071108
MAX UNIT
Volts
Volts
dBm
dBm
mA
C/W
mS
dB
%

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tc1504n Summary of contents

Page 1

... DC Tested DESCRIPTION The TC1504N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is processed without via -holes for single-bias applications. The short gate length enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure consistent quality ...

Page 2

... Dasoong 7 Web-Site: www.transcominc.com.tw = Rating DSS 28 dBm 3.8 W 175 +175 C C Gate Pad : 45*45 Drain Pad : 55*55 th Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan Phone: 886-6-5050086 TC1504N REV2_20071108 5 C; Handling Tool: Tweezers; Fax: 886-6-5051602 ...

Page 3

... Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan Phone: 886-6-5050086 TC1504N REV2_20071108 = 240 mA DS S12 S22 MAG ANG MAG 0 0.10178 71.935 0.22271 -133.76 56.902 0.36342 -136 ...

Page 4

... Phone: 886-6-5050086 TC1504N REV2_20071108 5.6716 0.65958 -172.85 5.6613 0.66017 -172.83 5.6535 0.66075 -172.81 5.6482 0.66135 -172.79 5.6452 0.66195 -172.77 5.6444 0.66255 -172.74 5 ...

Page 5

... Phone: 886-6-5050086 TC1504N REV2_20071108 7.4567 0.70072 -171.4 7.5156 0.70154 -171.38 7.5752 0.70237 -171.36 7.6356 0.70319 -171.35 7.6965 0.70401 -171.33 7.7582 0.70484 -171.31 7 ...

Page 6

... TAU Rdb Cbs IS N VBI VDELTA th Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan Phone: 886-6-5050086 TC1504N 0.027665 11.717 0.74785 0.02766 11.805 0.74865 0.027655 11.893 0.74945 0.02765 11.982 0.75025 0.027645 12.071 0.75104 0.02764 12.16 ...

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