tc1806 Transcom, Inc., tc1806 Datasheet

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tc1806

Manufacturer Part Number
tc1806
Description
5w High Linearity And High Efficiency Gaas Power Fets
Manufacturer
Transcom, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC1806
Manufacturer:
SYNERGY
Quantity:
5 000
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
Note:
* P
* *For the tight control of the pinch-off voltage . TC1806’s are divided into 3 groups:
TRANSCOM, INC.,
Web-Site:
Symbol
BV
(1) TC1806P1519 : Vp = -1.5V to -1.9V (2) TC1806P1620 : Vp = -1.6V to -2.0V
(3)TC1806P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
PAE
P
I
IP3
R
! 5W Typical Power at 6 GHz
! Linear Power Gain: G
! High Linearity: IP3 = 47 dBm Typical at 6 GHz
! Via Holes Source Ground
! Suitable for High Reliability Application
! Breakdown Voltage: BV
! Lg = 0.6 m, Wg = 12 mm
! High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
The TC1806 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity
and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides
low thermal resistance and low inductance. The long gate length makes the device to have high breakdown
voltage. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn
die-attach. Typical application include commercial and military high performance power amplifiers.
G
V
g
DSS
SCL
1dB
m
DGO
th
L
P
: Output Power of Single Carrier Level.
Output Power at 1dB Gain Compression Point, f = 6 GHz V
Linear Power Gain, f = 6 GHz V
Intercept Point of the 3
Power Added Efficiency at 1dB Compression Power, f = 6 GHz
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
www.transcominc.com.tw
5W High Linearity and High Efficiency GaAs Power FETs
90 Dasoong 7
DS
DS
rd
L
-order Intermodulation, f = 6 GHz V
= 10 dB Typical at 6 GHz
= 2 V, I
= 2 V, V
DGO
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
DS
D
18 V
GS
= 24 mA
= 8 V, I
DGO
= 0 V
DS
= 2 V, V
= 6 mA
DS
Phone: 886-6-5050086
A
Conditions
= 1200 mA
=25 C)
GS
= 0 V
1 / 4
DS
DS
= 8 V, I
=8V, I
DS
DS
=1200mA,*P
= 1200 mA
PHOTO ENLARGEMENT
Fax: 886-6-5051602
SCL
= 23dBm
MIN
36
18
9
-1.7**
TYP
2000
REV4_20070502
36.5
10
47
40
22
TC1806
3
2
MAX
UNIT
Volts
Volts
dBm
dBm
C/W
mS
dB
%
A

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tc1806 Summary of contents

Page 1

... Thermal Resistance th Note Output Power of Single Carrier Level. SCL * *For the tight control of the pinch-off voltage . TC1806’s are divided into 3 groups: (1) TC1806P1519 : Vp = -1.5V to -1.9V (2) TC1806P1620 : Vp = -1.6V to -2.0V (3)TC1806P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. th TRANSCOM, INC., 90 Dasoong 7 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. ...

Page 2

... Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw = Rating DSS 33 dBm 12 W 175 +175 Phone: 886-6-5050086 TC1806 REV4_20070502 Units: Micrometers Chip Thickness: 50 500 ± ± ± ± 12 Gate Pad: 76.0 x 59.5 Drain Pad: 86.0 x 76.0 Fax: 886-6-5051602 ...

Page 3

... Phone: 886-6-5050086 TC1806 REV4_20070502 = 1200 Swp Max 18 GHz S12 Swp Min Swp Max 18GHz S22 Swp Min S12 S22 ANG MAG ANG -2.09 0.7913 -175 ...

Page 4

... TRANSCOM, INC., 90 Dasoong 7 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com. 1200 PARAMETERS Rds Phone: 886-6-5050086 TC1806 REV4_20070502 Lg 0.008 nH Rs 0.106 Ohm Rg 0.093 Ohm Ls 0.001 nH 22.9 pF 2.977 pF Cgs Cds 0.185 Ohm 11.9 Ohm ...

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