TC2141 Transcom, Inc., TC2141 Datasheet
TC2141
Manufacturer Part Number
TC2141
Description
Noise High Dynamic Range Packaged Gaas Fets
Manufacturer
Transcom, Inc.
Datasheet
1.TC2141.pdf
(4 pages)
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
ABSOLUTE MAXIMUM RATINGS (T
* For the tight control of the pinch-off voltage range, we divide TC2131 into 3 model numbers to fit customer design requirement
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
(1)TC2131P0710 : Vp = -0.7V to -1.0V (2)TC2131P0811 : Vp = -0.8V to -1.1V (3)TC2131P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
Symbol
BV
The TC2141 is a high performance field effect transistor housed in a leadless air cavity plastic package with
TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes
this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
P
I
NF
R
G
V
G
DSS
g
1dB
Symbol
0.5 dB Typical Noise Figure at 12 GHz
High Associated Gain: Ga = 11.5 dB Typical at 12 GHz
18.5 dBm Typical Power at 12 GHz
12.5 dB Typical Linear Power Gain at 12 GHz
Breakdown Voltage : BV
Lg = 0.25 µm, Wg = 160 µm
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
Leadless Air Cavity Plastic Package
m
DGO
th
L
a
P
T
V
V
T
I
I
P
P
STG
DS
GS
CH
DS
GS
in
T
Noise Figure at V
Associated Gain at V
Output Power at 1dB Gain Compression Point, f = 12 GHz V
Linear Power Gain, f = 12GHz V
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Low Noise and High Dynamic Range Packaged GaAs FETs
Parameter
DS
= 2 V, I
DS
DS
DS
= 2 V, I
= 2 V, I
DGO
= 2 V, V
DS
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan.
≥ 9V
= 10 mA, f = 12GHz
DS
D
= 10 mA, f = 12GHz
GS
= 0.32mA
CONDITIONS
DS
DGO
= 0 V
DS
- 65 °C to +175 °C
= 6 V, I
= 2 V, V
= 0.08mA
150 mW
18 dBm
160 µA
Rating
175 °C
A
-3.0 V
7.0 V
I
=25 ° ° C)
A
DS
DSS
Phone: 886-6-5050086
=25 ° ° C)
= 25 mA
GS
= 0 V
P 1 / 4
TYPICAL NOISE PARAMETERS (T
V
DS
DS
Frequency
= 6 V, I
= 2 V, I
(GHz)
10
12
14
16
18
2
4
6
8
DS
DS
= 25 mA
= 10 mA
NF
(dB)
0.35
0.37
0.39
0.42
0.48
0.54
0.63
0.79
0.97
opt
Fax: 886-6-5051602
MIN
17.5
10
11
PHOTO ENLARGEMENT
9
(dB)
18.4
16.8
15.2
13.7
12.3
11.3
10.8
10.6
10.2
G
A
TYP
-1.0*
11.5
18.5
12.5
250
0.5
48
55
12
MAG
0.98
0.84
0.67
0.50
0.35
0.25
0.22
0.27
0.46
+
opt
MAX
0.7
ANG
115
157
206
266
336
18
35
56
82
PRE2_20070504
A
TC2141
=25 ° ° C)
UNIT
°C/W
Volts
Volts
Rn/50
dBm
mA
mS
dB
dB
dB
0.42
0.36
0.28
0.21
0.13
0.10
0.09
0.12
0.25
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TC2141 Summary of contents
Page 1
... Leadless Air Cavity Plastic Package DESCRIPTION The TC2141 is a high performance field effect transistor housed in a leadless air cavity plastic package with TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ...
Page 2
... Fax: 886-6-5051602 TC2141 PRE2_20070504 ANG -59 ...
Page 3
... Fax: 886-6-5051602 TC2141 PRE2_20070504 ANG ...
Page 4
... OUTLINE DIMENSIONS (Unit: mm) th TRANSCOM, INC., 90 Dasoong 7 Web-Site: www.transcominc.com.tw Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan. Phone: 886-6-5050086 TC2141 PRE2_20070504 Fax: 886-6-5051602 ...