TC2676 Transcom, Inc., TC2676 Datasheet

TC2676

Manufacturer Part Number

TC2676

Description

Low-cost Packaged Phemt Gaas Power Fets

Manufacturer

Transcom, Inc.

Datasheet

1.TC2676.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TC2676

Manufacturer:

SYNERGY

Quantity:

5 000

Current page: 1 of 3
Download datasheet (183Kb)

FEATURES

DESCRIPTION

ELECTRICAL SPECIFICATIONS (T

* P

** For the tight control of the pinch-off voltage range, we divide TC2676 into 3 model numbers to fit customer design requirement

TRANSCOM, INC.,

Web-Site:

l 2 W Typical Output Power at 6 GHz

l 9 dB Typical Linear Power Gain at 6 GHz

l High Linearity: IP3 = 43 dBm Typical at 6 GHz

l High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz

l Suitable for High Reliability Application

l Breakdown Voltage: BV

l Lg = 0.6 m, Wg = 5 mm

l Tight Vp ranges control

l High RF input power handling capability

l 100 % DC Tested

l Low Cost Ceramic Package

Symbol

(1)TC2676P1519 : Vp = -1.5V to -1.9V (2)TC2676P1620 : Vp = -1.6V to -2.0V (3)TC2676P1721 : Vp = -1.7V to -2.1V If

required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.

The TC2676 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100%

DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for

commercial and military high performance power applications.

SCL

PAE

IP3

DSS

1dB

DGO

: Output Power of Single Carrier Level

www.transcominc.com.tw

Output Power at 1dB Gain Compression Point, f = 6 GHz V

Linear Power Gain, f = 6 GHz V

Intercept Point of the 3

Power Added Efficiency at 1dB Compression Power, f = 6 GHz

Saturated Drain -Source Current at V

Transconductance at V

Pinch-off Voltage at V

Drain-Gate Breakdown Voltage at I

Thermal Resistance

90 Dasoong 7

2 W Low-Cost Packaged PHEMT GaAs Power FETs

DGO

-order Intermodulation, f

= 2 V, I

Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan, R.O.C.

= 2 V, V

18 V

= 10 mA

DGO

= 0 V

= 8 V, I

= 2 V, V

=2.5 mA

=25 C)

Phone: 886-6-5050086

Conditions

= 500 mA

= 6 GHz V

= 0 V

1/3

= 8 V, I

= 500 mA, *P

= 500 mA

Fax: 886-6-5051602

SCL

PHOTO ENLARGEMENT

= 20 dBm

MIN TYP MAX UNIT

32.5

-1.7**

TC2676

1.25

850

REV4_20070906

Volts

dBm

C/W

Related parts for TC2676

TC2676 Summary of contents

Page 1

... SCL ** For the tight control of the pinch-off voltage range, we divide TC2676 into 3 model numbers to fit customer design requirement (1)TC2676P1519 : Vp = -1.5V to -1.9V (2)TC2676P1620 : Vp = -1.6V to -2.0V (3)TC2676P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. TRANSCOM, INC., ...

Page 2

... Swp Min Per Div 2 GHz Swp Min S12 S22 ANG MAG ANG 28.75 0.4800 163.15 20.43 0.4735 149.56 6.31 0.4560 134.61 -13.20 0.4254 116.87 -38.78 0.3866 93.67 -71.41 0.3603 58.23 -111.25 0.4064 3.35 -154.91 0.5776 -56.08 Fax: 886-6-5051602 TC2676 REV4_20070906 Rating 8 V 500 ...

Page 3

... Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw A TCXXXX TCXXXX TCXXXX Section B-B 7” 400 Phone: 886-6-5050086 3/3 TC2676 REV4_20070906 2 PLCS 2 PLCS 4 PLCS 4 PLCS 4 PLCS 4 SIDES Bottom Side(Source Section A-A Fax: 886-6-5051602 ...

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