tc1801 Transcom, Inc., tc1801 Datasheet

tc1801

Manufacturer Part Number

tc1801

Description

5w High Linearity And High Efficiency Gaas Power Fets

Manufacturer

Transcom, Inc.

Datasheet

1.TC1801.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TC1801

Manufacturer:

Transcom

Quantity:

5 000

Current page: 1 of 3
Download datasheet (106Kb)

FEATURES

DESCRIPTION

ELECTRICAL SPECIFICATIONS (T

Note:

* P

* *For the tight control of the pinch-off voltage . TC1801’s are divided into 3 groups:

TRANSCOM, INC.,

Web-Site:

Symbol

! 5 W Typical Power at 6 GHz

! Linear Power Gain: G

! High Linearity: IP3 = 47 dBm Typical at 6 GHz

! Via Holes Source Ground

! Suitable for High Reliability Application

! Breakdown Voltage: BV

! Lg = 0.35 m, Wg = 12 mm

! High Power Added Efficiency: PAE

! Tight Vp ranges control

! High RF input power handling capability

The TC1801 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high

linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which

provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits

up to 20 GHz. All devices are 100 % DC tested to assure consistent quality.Bond pads are gold plated for either

thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn

die-attach. Typical applications include commercial and military high performance power amplifier.

(1) TC1801P1519 : Vp = -1.5V to -1.9V (2) TC1801P1620 : Vp = -1.6V to -2.0V

(3)TC1801P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.

PAE

IP3

DSS

SCL

1dB

DGO

100 % DC Tested

: Output Power of Single Carrier Level.

Output Power at 1dB Gain Compression Point, f = 6 GHz V

Linear Power Gain, f = 6 GHz V

Intercept Point of the 3

Power Added Efficiency at 1dB Compression Power, f = 6 GHz

Saturated Drain-Source Current at V

Transconductance at V

Pinch-off Voltage at V

Drain-Gate Breakdown Voltage at I

Thermal Resistance

www.transcominc.com.tw

5W High Linearity and High Efficiency GaAs Power FETs

90 Dasoong 7

-order Intermodulation, f = 6GHz V

= 2 V, I

= 10 dB Typical at 6 GHz

= 2 V, V

DGO

Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

15 V

= 24 mA

= 8 V, I

DGO

= 0 V

= 2 V, V

= 6 mA

40 % for Class A Operation

Phone: 886-6-5050086

Conditions

= 1200 mA

=25 C)

= 0 V

1 / 3

= 8 V, I

= 8V, I

=1200mA,*P

= 1200 mA

PHOTO ENLARGEMENT

Fax: 886-6-5051602

SCL

=23 dBm

MIN

-1.7**

TYP

2000

REV5_20070502

36.5

TC1801

MAX

UNIT

Volts

dBm

C/W

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tc1801 Summary of contents

Page 1

... DC Tested DESCRIPTION The TC1801 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits GHz ...

Page 2

... S21 Phone: 886-6-5050086 TC1801 REV5_20070502 Parameter Rating Drain to Source Voltage 8 V Drain Current 1200 mA Units: Micrometers Chip Thickness: 50 Gate Pad: 76.0 x 59.5 500 ± ± ± ± 12 Drain Pad: 86.0 x 76.0 S12 S22 ...

Page 3

... 1200 Rds Cds Phone: 886-6-5050086 TC1801 REV5_20070502 ANG MAG ANG -3.322 0.77731 -175.76 -6.1803 0.78933 -174.84 -8.3698 0.80383 -174.04 -10.0109 0.81955 -173.45 -11.134 0.83537 -173.09 -11.757 ...

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