TC2997C Transcom, Inc., TC2997C Datasheet
TC2997C
Manufacturer Part Number
TC2997C
Description
Flange Ceramic Packaged Gaas Power Fets
Manufacturer
Transcom, Inc.
Datasheet
1.TC2997C.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC2997C
Manufacturer:
Transcom
Quantity:
5 000
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS (@ 2.1 GHz )
* P
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
Preliminary
The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor with input prematched circuits. The flange ceramic package provides the best thermal
conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifier for commercial applications.
Symbol
SCL
BV
20 W Typical Power at 2.1 GHz
12 dB Typical Linear Power Gain at 2.1 GHz
High Linearity: IP3 = 52 dBm Typical
High Power Added Efficiency: Nominal PAE of 40 %
Suitable for High Reliability Application
Wg = 50 mm
100 % DC and RF Tested
Flange Ceramic Package
PAE
P
I
IP3
R
G
V
g
DSS
1dB
: Output Power of Single Carrier Level.
m
DGO
th
L
P
Output Power at 1dB Gain Compression Point
Linear Power Gain
Intercept Point of the 3
Power Added Efficiency at 1dB Compression Power
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
DS
rd
DS
-order Intermodulation, *P
= 2 V, I
= 2 V, V
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
D
CONDITIONS
GS
= 60 mA
DGO
DS
= 0 V
= 2 V, V
=15 mA
Phone: 886-6-5050086
GS
= 0 V
SCL
= 32 dBm
P 1 / 3
PHOTO ENLARGEMENT
Fax: 886-6-5051602
MIN
42
11
20
TYP
9000
12.5
-1.7
0.9
43
12
52
40
22
MAX
TC2997C
PRE3_20050418
UNIT
Volts
Volts
dBm
dBm
C/W
mS
dB
%
A
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TC2997C Summary of contents
Page 1
... Flange Ceramic Package DESCRIPTION The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. ...
Page 2
... I DSS 37 dBm testing. The static discharge must be less than 300V. 100 W 175 +175 C C Gate Drain Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 TC2997C PRE3_20050418 Source Fax: 886-6-5051602 ...
Page 3
... Murata 0.75 pF 0603 Murata 2.0 pF 0603 Murata 1000 pF 0603 Murata 0.1 uF 0603 Murata 10 uF 1206 Murata 2.2 pF 0805 ATC 1.5 pF 0805 ATC 1000 pF 0603 Murata Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 TC2997C PRE3_20050418 Fax: 886-6-5051602 ...