IS42S16100-10TI ISSI [Integrated Silicon Solution, Inc], IS42S16100-10TI Datasheet

IS42S16100-10TI

Manufacturer Part Number

IS42S16100-10TI

Description

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Manufacturer

ISSI [Integrated Silicon Solution, Inc]

Datasheet

1.IS42S16100-10TI.pdf (78 pages)

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PIN DESCRIPTIONS

IS42S16100

FEATURES

• Clock frequency: 166, 143, 100 MHz

• Fully synchronous; all signals referenced to a

• Two banks can be operated simultaneously and

• Dual internal bank controlled by A11 (bank

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length

• Programmable burst sequence:

• Auto refresh, self refresh

• 4096 refresh cycles every 128 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write

• Burst termination by burst stop and precharge

• Byte controlled by LDQM and UDQM

• Package 400-mil 50-pin TSOP II

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

Rev. C

11/01/01

512K Words x 16 Bits x 2 Banks (16-MBIT)

SYNCHRONOUS DYNAMIC RAM

A0-A11

A0-A10

A11

A0-A7

I/O0 to I/O15

CLK

CKE

RAS

positive clock edge

independently

select)

– (1, 2, 4, 8, full page)

Sequential/Interleave

operations capability

command

Address Input

Row Address Input

Bank Select Address

Column Address Input

Data I/O

System Clock Input

Clock Enable

Chip Select

Row Address Strobe Command

1-800-379-4774

DESCRIPTION

ISSI

organized as a 524,288-word x 16-bit x 2-bank for

improved performance. The synchronous DRAMs

achieve high-speed data transfer using pipeline

architecture. All inputs and outputs signals refer to the

rising edge of the clock input.

PIN CONFIGURATIONS

50-Pin TSOP (Type II)

CAS

LDQM

UDQM

Vcc

GND

VccQ

GNDQ

’s 16Mb Synchronous DRAM IS42S16100 is

GNDQ

VCCQ

LDQM

I/O7

VCC

CAS

RAS

VCC

I/O0

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

A11

A10

Column Address Strobe Command

Write Enable

Lower Bye, Input/Output Mask

Upper Bye, Input/Output Mask

Power

Ground

Power Supply for I/O Pin

Ground for I/O Pin

No Connection

NOVEMBER 2001

ISSI

GND

I/O15

I/O14

GNDQ

I/O13

I/O12

VCCQ

I/O11

I/O10

GNDQ

I/O9

I/O8

VCCQ

UDQM

CLK

CKE

GND

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