M36W0R5020B0ZAQ STMICROELECTRONICS [STMicroelectronics], M36W0R5020B0ZAQ Datasheet
M36W0R5020B0ZAQ
Related parts for M36W0R5020B0ZAQ
M36W0R5020B0ZAQ Summary of contents
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... Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM SUPPLY VOLTAGE – DDF DDQ DDS LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – ...
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... Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 DDF V Supply Voltage DDS V Supply Voltage DDQ V Program Supply Voltage PPF V Ground FUNCTIONAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 4. Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 2. Main Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 FLASH MEMORY COMPONENT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 SRAM COMPONENT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 5. SRAM Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 SRAM OPERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ ...
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... Figure 6. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 7. AC Measurement Load Circuit Table 5. Device Capacitance Table 6. Flash Memory DC Characteristics - Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 7. Flash Memory DC Characteristics - Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 8. SRAM DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 8. SRAM Read Mode AC Waveforms, Address Controlled with UB Figure 9. SRAM Read AC Waveforms, G Figure 10.SRAM Standby AC Waveforms Table 9 ...
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... Note: 1. A20-A18 are address inputs for the Flash memory com- AI08754b (1) Address Inputs Common Data Input/Output Flash Memory Power Supply Common Flash and SRAM Power Supply for I/O Buffers Common Flash Optional Supply Voltage for Fast Program and Erase ...
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Figure 3. TFBGA Connections (Top view through package A18 A17 DQ8 G S DQ0 ...
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... M58WR032FT/B datasheet). Flash Reset (RP ). The Reset input provides a F hardware reset of the memory. When Reset the memory is in Reset mode: the outputs are IL high impedance and the current consumption is reduced to the Reset Supply Current I Table 6., Flash Memory DC Characteristics - Cur- 6/26 and Table 1 ...
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... Byte Enable input enables the lower byte for SRAM (DQ0-DQ7 active low Supply Voltage. V DDF DDF supply to the internal core of the Flash memory component the main power supply for all Flash memory operations (Read, Program and Erase). V Supply Voltage. V DDS DDS supply to the internal core of the SRAM device ...
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... 8/26 most common example is simultaneous read oper- ations on the Flash memory and SRAM compo- nents which would result in a data bus contention. and Therefore it is recommended to put the other de- S vices in the high impedance state when reading the selected device. ...
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... IH Disable V Flash Standby Flash Reset SRAM Read Flash Memory must be disabled SRAM Write Output Disable Any Flash mode is allowed. SRAM Standby Note Don't care can be tied the valid address has been previously latched Depends ...
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... M36W0R5020T0, M36W0R5020B0 FLASH MEMORY COMPONENT The M36W0R5020T0 and M36W0R5020B0 con- tain a 32 Mbit Flash memory. For detailed informa- tion on how to use it, see the M58WR032FT/B SRAM COMPONENT The M36W0R5020T0 and M36W0R5020B0 con- tain a 4 Mbit SRAM. See Figure 5., SRAM Block Diagram in conjunction with the Figure 5 ...
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SRAM OPERATIONS There are five standard operations that control the device. These are Read, Write, Standby/Power- down, Data Retention and Output Disable. Read. Read operations are used to output the contents of the SRAM Array. The device is in Byte ...
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... Ambient Operating Temperature A T Temperature Under Bias BIAS T Storage Temperature STG T Lead Temperature During Soldering LEAD V Input or Output Voltage IO V Flash Memory Core Supply Voltage DDF V Input/Output Supply Voltage DDQ V SRAM Supply Voltage DDS V Flash Memory Program Voltage PPF I Output Short Circuit Current O t ...
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... C Input Capacitance IN C Output Capacitance OUT Note: Sampled only, not 100% tested. M36W0R5020T0, M36W0R5020B0 Conditions summarized in AC Measurement check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. Flash Memory Min Max 1.7 1.95 – – 1.7 1.95 11.4 12.6 V +0.4 –0.4 DDQ – ...
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... M36W0R5020T0, M36W0R5020B0 Table 6. Flash Memory DC Characteristics - Currents Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO Supply Current Asynchronous Read (f=6MHz) Supply Current Synchronous Read (f=54MHz) I DD1 Supply Current Synchronous Read (f=66MHz) I Supply Current (Reset) DD2 I Supply Current (Standby) DD3 I Supply Current (Automatic Standby) ...
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... Table 7. Flash Memory DC Characteristics - Voltages Symbol Parameter V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage Program Voltage-Logic PP1 PPF V V Program Voltage Factory PPH PPF V Program or Erase Lockout PPLK V V Lock Voltage LKO ...
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M36W0R5020T0, M36W0R5020B0 Figure 8. SRAM Read Mode AC Waveforms, Address Controlled with UB A0-A17 DQ0-DQ15 DATA VALID Note Low High Low Figure 9. SRAM Read AC Waveforms, G A0-A17 E1 ...
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Table 9. SRAM Read AC Characteristics Symbol Alt t AVAV t t Read Cycle Time E1LE1H RC t E2HE2L t t Address Valid to Output Valid AVQV Address Transition to Output Transition AVQX OHA (2) t Byte ...
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M36W0R5020T0, M36W0R5020B0 Figure 11. SRAM Write AC Waveforms, E1 A0-A17 tGHDZ DQ0-DQ15 Note and UB ,LB must be asserted to initiate ...
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Figure 12. SRAM Write AC Waveforms, W A0-A17 tGHDX DQ0-DQ15 Note and UB ,LB must be asserted to initiate a write ...
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M36W0R5020T0, M36W0R5020B0 Figure 13. SRAM Write AC Waveforms, W A0-A17 DQ0-DQ15 Note: 1. During this period, the I/O pins are in output mode and input signals should not be ...
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Table 10. SRAM Write AC Characteristics Symbol Alt t t Write Cycle Time AVAV AVE1L t , AVE2H t Address Valid to Beginning of Write SA t AVWL t AVBL t AVWH t AVE1H t Address Valid ...
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M36W0R5020T0, M36W0R5020B0 Figure 15. SRAM Low V DDS V DDS Figure 16. SRAM Low V DDS V DDS Table 11. SRAM Low V Data Retention Characteristic DDS Symbol Parameter ...
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PACKAGE MECHANICAL Figure 17. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Package Outline BALL "A1" FE Note: Drawing is not to scale. Table 12. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, ...
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... E = Lead-free and RoHS Package, Standard Packing F = Lead-free and RoHS Package, Tape & Reel Packing Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available op- tions (Speed, Package, etc.) or for further information on any aspect of this device, please contact the ST- Microelectronics Sales Office nearest to you ...
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... Date Version 27-Aug-2003 1.0 First Issue M36W0R5030T0 and M36W0R5030B0 part numbers and 8 Mbit SRAM option removed. 0.15µm Flash memory technology replaced by the 0.13µm technology. 06-May-2004 2.0 Package specifications updated. E and F Lead-free Package options added to 13., Ordering Information Document status promoted to full Datasheet. 17-Dec-2004 3 ...
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M36W0R5020T0, M36W0R5020B0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from ...