STP40NF10_07 STMICROELECTRONICS [STMicroelectronics], STP40NF10_07 Datasheet
STP40NF10_07
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STP40NF10_07 Summary of contents
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General features Type V DSS STP40NF10 100V ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested Description This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. ...
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Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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STP40NF10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) ...
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Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS Breakdown voltage Zero gate voltage I DSS Drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...
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STP40NF10 Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...
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Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STP40NF10 ...
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STP40NF10 Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 12. Normalized breakdown voltage ...
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Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. ...
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STP40NF10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on ...
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Package mechanical data DIM L20 L30 øP Q 10/12 TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 ...
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STP40NF10 5 Revision history Table 7. Revision history Date 16-Dec-2004 17-Aug-2006 31-Jan-2007 Revision 1 First version. 2 The document has been reformatted. 3 Typo mistake on Table Revision history Changes 1. 11/12 ...
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...