HCS283DMSR INTERSIL [Intersil Corporation], HCS283DMSR Datasheet

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HCS283DMSR

Manufacturer Part Number
HCS283DMSR
Description
Radiation Hardened 4-Bit Full Adder with Fast Carry
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
1.HCS283DMSR.pdf (9 pages)
October 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS283MS is a Radiation Hardened 4-bit binary full
adder with fast carry that adds two 4-bit binary numbers and
generates a carry-out bit if the sum exceeds 15.
The device can be used in positive or negative logic. When using
positive logic the carry-in (CIN) input must be tied low, if there is
no carry-in signal.
The HCS283MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS283MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCS283DMSR
HCS283KMSR
HCS283D/Sample
HCS283K/Sample
HCS283HMSR
Day (Typ)
- VIL = 30% VCC Max
- VIH = 70% VCC Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
RAD (Si)/s
-55
-55
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/Bit-
1
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
SCREENING LEVEL
Pinouts
SE 1
GND
CIN
HCS283MS
B1
A1
A0
B0
S0
4-Bit Full Adder with Fast Carry
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
FLATPACK PACKAGE (FLATPACK)
16 LEAD CERAMIC DUAL-IN-LINE
16 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
SE 1
GND
CIN
B1
A1
S0
A0
B0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
TOP VIEW
TOP VIEW
Radiation Hardened
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
Spec Number
16
15
14
13
12
11
10
9
16
15
14
13
12
11
10
9
PACKAGE
B2
A2
S2
A3
B3
S3
C0
File Number
VCC
518850
B2
A2
S2
A3
B3
S3
C0
VCC
4057

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HCS283DMSR Summary of contents

Page 1

... CMOS/SOS Logic Family. The HCS283MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCS283DMSR HCS283KMSR HCS283D/Sample HCS283K/Sample HCS283HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. ...

Page 2

Functional Diagram CIN GND 16 VCC S0 4 HCS283MS COUT 10 9 518850 Spec Number ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Propagation Delay CIN to SO TPHL TPLH CIN to S1 TPHL TPLH CIN to S2, CO TPHL TPLH CIN to S3 TPHL TPLH An TPHL TPLH An ...

Page 5

TABLE 4. POSTIRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Supply Current ICC VCC = 5.5V, VIN = VCC or GND Output Current (Sink) IOL VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0V Output Current IOH VCC = VIH ...

Page 6

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate group A inspection in ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

Propagation Delay Timing Diagram VIH INPUT VS VSS TPLH VOH VS OUTPUT VOL VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VIL 0 GND 0 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems ...

Page 9

Die Characteristics DIE DIMENSIONS mils 2.21mm x 2.19mm METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...

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