TC2101 TRANSCOM [Transcom, Inc.], TC2101 Datasheet

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TC2101

Manufacturer Part Number
TC2101
Description
Plastic Packaged Low Noise PHEMT GaAs FETs
Manufacturer
TRANSCOM [Transcom, Inc.]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC2101
Manufacturer:
SAMSUNG
Quantity:
1 001
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
ABSOLUTE MAXIMUM RATINGS (T
TRANSCOM, INC.,
Web-Site:
! 1.5 dB Typical Noise Figure at 12 GHz
! High Associated Gain: Ga = 8 dB Typical at 12 GHz
! 18.5 dBm Typical Power at 12 GHz
! 9 dB Typical Linear Power Gain at 12 GHz
! Lg = 0.25 m, Wg = 160 m
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
! Low Cost Plastic Micro-X Package
The TC2101 is a high performance field effect transistor housed in a plastic package with TC1101 PHEMT Chip.
Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to
assure consistent quality.
Symbol
BV
P
I
NF
R
G
V
G
DSS
g
1dB
Symbol
m
DGO
th
L
a
P
T
V
V
T
I
I
P
P
STG
DS
GS
CH
DS
GS
in
T
www.transcominc.com.tw
Noise Figure at V
Associated Gain at V
Output Power at 1dB Gain Compression Point, f = 12GHz V
Linear Power Gain, f = 12GHz V
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
90 Dasoong 7
Parameter
Plastic Packaged Low Noise PHEMT GaAs FETs
DS
= 2 V, I
DS
DS
DS
= 2 V, I
= 2 V, I
= 2 V, V
th
DS
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
= 10 mA, f = 12GHz
DS
D
= 10 mA, f = 12GHz
GS
= 0.32mA
DGO
- 65
= 0 V
DS
Conditions
DS
= 2 V, V
= 0.08mA
150 mW
= 6 V, I
18 dBm
160 A
C
Rating
175
-3.0 V
Phone: 886-6-5050086
A
7.0 V
I
to +175
=25 C)
DSS
A
=25 C)
C
GS
DS
= 0 V
= 25 mA
C
1/4
* For the tight control of the pinch-off voltage range, we divide
(1) TC2101P0710 : Vp = -0.7V to -1.0V
(2) TC2101P0811 : Vp = -0.8V to -1.1V
(3) TC2101P0912 : Vp = -0.9V to -1.2V
TC2101 into 3 model numbers to fit customer design
requirement
DS
If required, customer can specify the requirement in purchasing
document. For special Vp requirement, please contact factory
for details.
= 6 V, I
DS
= 25 mA
Fax: 886-6-5051602
PHOTO ENLARGEMENT
MIN
17.5
7
8
9
TYP
-1.0*
18.5
250
1.5
48
55
12
8
9
REV4_20070504
TC2101
MAX
1.8
UNIT
Volts
Volts
dBm
mA
C/W
mS
dB
dB
dB

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TC2101 Summary of contents

Page 1

... Low Cost Plastic Micro-X Package DESCRIPTION The TC2101 is a high performance field effect transistor housed in a plastic package with TC1101 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ...

Page 2

... Phone: 886-6-5050086 2/4 TC2101 REV4_20070504 = Swp Max 18 GHz -180 S12 Swp Min 2 GHz Swp Max 18GHz S22 Swp Min S12 S22 ANG MAG ANG 62.17 0.6820 -26 ...

Page 3

... Phone: 886-6-5050086 3/4 TC2101 REV4_20070504 = Swp Max 18 GHz 0 S12 Swp Min 2 GHz Swp Max 18GHz S22 Swp Min 2GHz S12 S22 ANG MAG ANG 61.31 0.7226 -26 ...

Page 4

... OUTLINE DIMENSIONS (Unit : mm) Source th TRANSCOM, INC., 90 Dasoong 7 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Gate Source 2D Drain Phone: 886-6-5050086 Fax: 886-6-5051602 4/4 TC2101 REV4_20070504 ...

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