BFP405F_07 INFINEON [Infineon Technologies AG], BFP405F_07 Datasheet - Page 2

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BFP405F_07

Manufacturer Part Number
BFP405F_07
Description
NPN Silicon RF Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 5 mA, V
= 0.5 V, I
= 15 V, V
= 5 V, I
B
E
CE
= 0
C
= 0
BE
= 0
= 4 V, pulse measured
thJA
= 0
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
60
4
-
-
-
Values
Value
typ.
95
500
5
-
-
-
max.
2007-04-20
100
130
10
1
-
BFP405F
Unit
V
µA
nA
µA
-
Unit
K/W

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