BFP405F_07 INFINEON [Infineon Technologies AG], BFP405F_07 Datasheet - Page 5

• Manufacturer Part Number: BFP405F_07
• Description: NPN Silicon RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

For non-linear simulation:
· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
· If you need simulation of the reverse characteristics, add the diode with the
· Simulation of package is not necessary for frequencies < 100MHz.
Note:
· This transistor is constructed in a common emitter configuration. This feature causes
The common emitter configuration shows the following advantages:
· Higher gain because of lower emitter inductance.
· Power is dissipated via the grounded emitter leads, because the chip is mounted
Please note, that the broadest lead is the emitter lead.
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
on copper emitter leadframe.
C'-E'- diode data between collector and emitter.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Transistor Schematic Diagram
B
E
E
EHA07307
5
C
2007-04-20
BFP405F