BSS138LT1D ONSEMI [ON Semiconductor], BSS138LT1D Datasheet
BSS138LT1D
Manufacturer Part Number
BSS138LT1D
Description
Power MOSFET 200 mA, 50 V
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.BSS138LT1D.pdf
(5 pages)
BSS138LT1
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2009
February, 2009 − Rev. 5
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature
Thermal Resistance,
Maximum Lead Temperature for
Typical applications are DC−DC converters, power management in
Low Voltage Applications
Low Threshold Voltage (V
Miniature SOT−23 Surface Mount Package Saves Board Space
Pb−Free Packages are Available
Range
Junction−to−Ambient
Soldering Purposes, for 10 seconds
− Continuous @ T
− Pulsed Drain Current (t
Rating
A
= 25°C
(T
A
= 25°C unless otherwise noted)
p
A
Preferred Device
≤ 10 ms)
= 25°C
GS(th)
: 0.5 V−1.5 V) Makes it Ideal for
Symbol
T
V
R
J
V
I
P
, T
DSS
DM
T
I
qJA
GS
D
D
L
stg
− 55 to 150
Value
± 20
200
800
225
556
260
50
1
°C/W
Unit
mW
Vdc
Vdc
mA
°C
°C
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
BSS138LT1
BSS138LT1G
BSS138LT3
BSS138LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
Device
J1
M
G
(Note: Microdot may be in either location)
CASE 318
STYLE 21
SOT−23
ORDERING INFORMATION
2
1
R
http://onsemi.com
200 mA, 50 V
= Device Code
= Date Code*
= Pb−Free Package
DS(on)
3
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
SOT−23
N−Channel
Publication Order Number:
= 3.5 W
3
2
1
10,000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
MARKING
DIAGRAM
J1 M G
Shipping
BSS138LT1/D
G
†
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BSS138LT1D Summary of contents
Page 1
BSS138LT1 Preferred Device Power MOSFET 200 mA N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low Threshold Voltage (V : ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 mAdc Zero Gate Voltage Drain Current ( Vdc Vdc Vdc ...
Page 3
TYPICAL ELECTRICAL CHARACTERISTICS 0 3 25° 0.7 0.6 0.5 0.4 0.3 0.2 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 2.2 2 ...
Page 4
TYPICAL ELECTRICAL CHARACTERISTICS 2 0.05 0.1 0. DRAIN CURRENT (AMPS) D Figure 7. On−Resistance versus Drain Current 4 ...
Page 5
D SEE VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are ...