TP30-100 STMicroelectronics, TP30-100 Datasheet - Page 5

• Manufacturer Part Number: TP30-100
• Description: TRISILTM
• Manufacturer: STMicroelectronics

Fig. 1: Non repetitive surge peak on-sate current
versus overload duration (Tj initial = 25 C).
20
15
10
Fig. 3: Relative variation of junction capacitance
versus reverse applied voltage (typical values).
Note: For VRM upper than 56V, the curve is extrapolated (dotted line)
1.0
0.5
0.2
0.1
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration.
1E+2
1E+1
1E+0
1E-1
1E-2
5
0
ITSM(A)
1
1E-3
C[VR]/C[VR=1V]
Zth(j-a)( CW)
1E-1
1E-2
1E-1
1E+0
10
VR(V)
t(s)
tp(s)
1E+0
1E+1
1E+1
1E+2
F = 50Hz
100
F = 1MHz
1E+2 5E+2
1E+3
300
Fig. 2: Relative variation of holding current versus
junction temperature.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 4: On-state voltage versus on-state current
(typical values).
50
20
10
Fig. 6: Relative variation of V
junction temperature.
1.10
1.05
1.00
0.95
0.90
5
2
1
-40
0
IT(A)
-40
IH[Tj] / IH[Tj=25 C]
Vbo[Tj]/Vbo[Tj=25 C]
270 V
62 V
Tj = 25 C
1
-20
-20
2
0
3
0
20
4
20
Tj( C)
VT(V)
Tj( C)
40
5
40
6
TP30-xxx Series
60
BO
7
60
voltage versus
80
8
80
100
9
120
100
5/6
10