L6567 STMicroelectronics, L6567 Datasheet

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L6567

Manufacturer Part Number
L6567
Description
HIGH VOLTAGE DRIVER FOR CFL
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
L6567
Manufacturer:
SIEMENS
Quantity:
656
Part Number:
L6567D
Manufacturer:
ST
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Part Number:
L6567DR
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DESCRIPTION
The device is a monolithic high voltage integrated cir-
cuit designed to drive CFL and small TL lamps with a
minimum part count.
It provides all the necessary functions for proper pre-
heat, ignition and steady state operation of the lamp:
BLOCK DIAGRAM
January 2000
This is preliminary information on a new product now in development. Details are subject to change without notice.
C
S
BCD-OFF LINE TECHNOLOGY
FLOATING SUPPLY VOLTAGE UP TO 570V
GND REFERRED SUPPLY VOLTAGE UP TO
18V
UNDER VOLTAGE LOCK OUT
CLAMPING ON Vs
DRIVER CURRENT CAPABILITY:
30mA SOURCE
70mA SINK
PREHEAT AND FREQUENCY SHIFT TIMING
variable frequency oscillator;
C
f
C
i
CF
V
CI
S
5
12
14
REFERENCE
FEED FORWARD
VOLTAGE
FREQ. SHIFTING
RHV
VCO +
Rhv
13
comp.
to
Vhv
GENERATOR
CURRENT
Ref
BIAS
10
R
REF
CP
8
Cp/Cav
PREHEATING
V
S
TIMING
LOGIC
HIGH VOLTAGE DRIVER FOR CFL
SHIFTING
LEVEL
C
Besides the control functions, the IC provides the lev-
el shift and drive function for two external power MOS
FETs in a half-bridge topology.
DRIVER
DRIVER
settable preheating and ignition time;
capacitive mode protection;
lamp power independent from mains voltage variation.
HIGH
SIDE
LOW
SIDE
MULTIPOWER BCD TECHNOLOGY
11
L6567D
1
2
3
6
7
9
SO14
F
G1
S1
G2
PGND
SGND
R
S
S
ORDERING NUMBERS:
T1
T2
D96IN441B
Rshunt
L
Vhv
Lamp
CL
Chv
Chv
DIP14
L6567
L6567
MAINS
1/15

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L6567 Summary of contents

Page 1

... MOS FETs in a half-bridge topology. Cp/Cav HIGH 2 G1 PREHEATING LEVEL SIDE TIMING SHIFTING DRIVER 3 S1 LOW 6 G2 SIDE LOGIC DRIVER 7 PGND 11 SGND L6567 DIP14 L6567 Vhv T1 Chv L Lamp T2 MAINS CL Chv Rshunt D96IN441B 1/15 ...

Page 2

... L6567 PIN FUNCTION N Pin 1 F Floating Supply of high side driver Gate of high side switch 3 S1 Source of high side switch 4 NC High Voltage Spacer. (Should be not connected Supply Voltage for GND level control and drive Gate of low side switch ...

Page 3

... For VS VS high 1 (3) For VS > VS high 1 (4) Internally Limited Note: ESD immunity for pins 1, 2 and 3 is guaranteed up to 900 V (Human Body Model) Parameter 0.5sec mains transient 0.5sec mains transient with respect to pin S1 L6567 Value Unit 18 ( +2VBE ( ...

Page 4

... L6567 ELECTRICAL CHARACTERISTCS (V = 12V 30K ; C = 100pF REF F Symbol Parameter V - SUPPLY VOLTAGE SECTION Turn On Threshold S high Clamping Voltage S high2 Turn Off Threshold S low Supply Voltage Hysteresis S HYST V V Voltage to Guarantee S low =”0”and V = ” ...

Page 5

... Before starting the first commutation; when switching 6V is guaranteed. General operation The L6567 uses a small amount of current from a supply resistor(s) to start the operation of the IC. Once start up condition is achieved, the IC turns on the lower MOS transistor of the half bridge which allows the bootstrap capacitor to charge ...

Page 6

... L6567 Figure 1. Start up V SLOW1 low side mosfet high side mosfet Oscillator The circuit starts oscillating when the voltage supply V condition the oscillator capacitor C (at pin 12) is charged and discharged symmetrically with a current set main- ...

Page 7

... IGN PRE P . PRE . I and C directly after the ignition phase. To prevent too REF F , the current that charges the oscillator capacitor C REF on pin 8 and an integrated resistor R P feed forward mode L6567 TIME ), causing an increased MIN (the capacitor across the lamp). increases F . AVERAGE Irhv 7/15 ...

Page 8

... C Relationship between external components and sistem working condition L6567 is designed to drive CFL and TL lamps with a minimum part count topology. This feature implies that each external component is related to one or more circuit operating state. ...

Page 9

... 100nF) are Now C can be chosed to set the desired T MIN P and C ) can be chosen at the end because they are just related L6567 , R , and charged that is to say they are F has to be chosen ...

Page 10

... L6567 Figure 4. IC Operation START V NO OSCILLATION LOW SIDE MOS ON HIGH SIDE MOS OFF V START OSCILLATION F=F MAX T T=T PREHEATING MODE F>F MIN Y DECR EASE FREQUENCY OPEN LOAD DETECT ION: STOP LOW SIDE MOS ON AND HIGH SIDE MOS OFF STOP OSCILLATION ...

Page 11

... .20 0 .40 6 0.0 0 L6567 @ C = 82pF RHV F 0 .60 0.80 1.00 1.20 Irh =100pF RHV F 0 ...

Page 12

... L6567 Figure 11. Frequency RHV 80.00 60.00 R ref 40.00 R ref ef 27K 30K R r ef= 33K Rr ef ef= 39K 20. 47K , 51 K 0.20 0.40 0.60 0. Figure 12 measurements and calculations MIN eas ura m ents Fm in= 1/(8 *C f*R ref ...

Page 13

... DIM. MIN. TYP. MAX. MIN. TYP. a1 0.51 0.020 B 1.39 1.65 0.055 b 0.5 0.020 b1 0.25 0.010 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 I 5.1 L 3.3 0.130 Z 1.27 2.54 0.050 OUTLINE AND MECHANICAL DATA MAX. 0.065 0.787 0.280 0.201 DIP14 0.100 L6567 13/15 ...

Page 14

... L6567 mm DIM. MIN.. TYP. MAX.. MIN.. A 1.75 a1 0.1 0.25 0.004 a2 1.6 b 0.35 0.46 0.014 b1 0.19 0.25 0.007 C 0 (typ.) D (1) 8.55 8.75 0.336 E 5.8 6.2 0.228 e 1.27 e3 7.62 F (1) 3.8 4 0.150 G 4.6 5.3 0.181 L 0.4 1.27 0.016 M 0. (max.) (1) D and F do not include mold flash or protrusions. Mold flash or potrusions shall not exceed 0.15mm (.006inch). 14/15 inch OUTLINE AND TYP ...

Page 15

... L6567 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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