WS57C191C STMicroelectronics, WS57C191C Datasheet - Page 4

• Manufacturer Part Number: WS57C191C
• Description: MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM
• Manufacturer: STMicroelectronics

WS57C191C/291C
NOTES: 4. This parameter is only sampled and is not 100% tested.
TEST LOAD
2-10
CAPACITANCE
NOTE: 6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
SYMBOL
2.01 V
D.U.T.
C
C
C
IN
OUT
VPP
5.Typical values are for TA = 25°C and nominal supply voltages.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between V
Inadequate decoupling may result in access time degradation or other transient performance failures.
(High Impedance Test Systems)
98
(4)
Input Capacitance
Output Capacitance
V
PP
T
PARAMETER
A
Capacitance
= 25°C, f = 1 MHz
30 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
CONDITIONS
V
V
V
IN
OUT
PP
= 0V
= 0 V
= 0V
A.C. TESTING INPUT/OUTPUT WAVEFORM
A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a
logic "0." Timing measurements are made at 1.5 V for input and
output transitions in both directions.
3.0
0.0
TYP
18
1.5
4
8
(5)
CC
POINTS
TEST
and ground is recommended.
MAX
12
25
6
1.5
UNITS
pF
pF
pF