K4R881869D Samsung semiconductor, K4R881869D Datasheet - Page 16

• Manufacturer Part Number: K4R881869D
• Description: 256/288Mbit RDRAM(D-die)
• Manufacturer: Samsung semiconductor

K4R571669D/K4R881869D
Timing Characteristics
a. t
b.This parameter also applies to a-1066 part when operated with t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Q
QR
Q1
HR
QR1
PROP1
NAPXA
NAPXB
PDNXA
PDNXB
AS
SA
ASN
ASP
Q,MIN
, t
Symbol
, t
QF
QF1
and t
Q,MAX
CTM-to-DQA/DQB output time @ t
CTM-to-DQA/DQB output time @ t
DQA/DQB output rise and fall times @ t
DQA/DQB output rise and fall times @ t
SCK(neg)-to-SIO0 delay @ C
SCK(pos)-to-SIO0 delay @ C
SIO
SIO0-to-SIO1 or SIO1-to-SIO0 delay @ C
NAP exit delay - phase A
NAP exit delay - phase B
PDN exit delay - phase A
PDN exit delay - phase B
ATTN-to-STBY power state delay
STBY-to-ATTN power state delay
ATTN/STBY-to-NAP power state delay
ATTN/STBY-to-PDN power state delay
for other t
OUT
rise/fall @ C
CYCLE
values can be interpolated between or extrapolated from the timings at the 3 specified t
LOAD,MAX
LOAD,MAX
LOAD,MAX
Parameter
= 20pF
Table 12: Timing Characteristics
CYCLE
CYCLE
CYCLE
CYCLE
= 20pF (SD read data hold).
= 20pF (SD read data valid).
LOAD,MAX
=1.875ns
=2.5ns
CYCLE
=1.875ns
=2.5ns
= 2.50ns
Page 14
= 20pF
-0.260
-0.195
Min
0.2
0.2
2
-
-
-
-
-
-
-
-
-
-
-
a,b
a
Version 1.4 July 2002
+0.260
+0.195
Max
9000
0.32
0.45
10
12
20
50
40
Direct RDRAM
4
1
0
8
8
-
a,b
a
CYCLE
t
t
t
t
t
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
Unit
values.
µs
ns
ns
ns
ns
ns
ns
ns
ns
Figure(s)
Figure 58
Figure 58
Figure 61
Figure 61
Figure 61
Figure 61
Figure 50
Figure 50
Figure 50
Figure 50
Figure 48
Figure 48
Figure 49
Figure 49
™