K4R881869D Samsung semiconductor, K4R881869D Datasheet - Page 18

• Manufacturer Part Number: K4R881869D
• Description: 256/288Mbit RDRAM(D-die)
• Manufacturer: Samsung semiconductor

K4R571669D/K4R881869D
Absolute Maximum Ratings
I
a. CMOS interface consumes power in all power states.
b. x18/x16 RDRAM data width.
c. This does not include the I
a. The supply current will be 150mA when t
DD
V
V
T
T
I
I
I
I
I
I
I
I
I
I
DD,PDN
DD,NAP
DD,STBY
DD,REFRESH
DD,ATTN
DD,ATTN-W
DD,ATTN-R
DD,PWRUP,D
DD,SETR,D
DD
STORE
MIN
I,ABS
DD,ABS
Note*) Component : refer to T
Symbol
value
- Supply Current Profile
Symbol
, V
DDA,ABS
RDRAM Power State and Steady-State Transaction Rates
Device in PDN, self-refresh enabled and INIT.LSR=0.
Device in NAP.
Device in STBY. This is the average for a device in STBY with (1) no
packets on the Channel, and (2) with packets sent to other devices.
Device in STBY and refreshing rows at the t
Device in ATTN. This is the average for a device in ATTN with (1) no
packets on the Channel, and (2) with packets sent to other devices.
Device in ATTN. ACT command every 8•t
8•t
Device in ATTN. ACT command every 8•t
8•t
CYCLE
CYCLE
I
I
DD
DD
from power -on to SETR
from SETR to CLRR
OL
, WR command every 4•t
, RD command every 4•t
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
Minimum operation temperature
sink current. The RDRAM dissipates I
J,
Parameter
Θ
JC
RIMM: refre to T
CYCLE
Table 16: Supply Current at Initialization
is in the range 15ns to 1000ns.
Table 14: Absolute Maximum Ratings
CYCLE
CYCLE
Table 15: Supply Current Profile
Parameter
PLATE, MAX
, and data is 1111..1111
, and data is 1100..1100
CYCLE
CYCLE
REF,MAX
Allowed Range of t
, PRE command every
, PRE command every
OL
•
Page 16
period.
V
OL
1.875ns to 2.5ns
1.875ns to 2.5ns
in each output driver when a logic one is driven.
c
a
CYCLE
Min
-
-
-
-
-
-
-
Min
- 0.3
- 0.5
- 50
0
(1066MHz, -
32P/-32/-35)
V
V
790(x18)
730(x16)
700(x18)
650(x16)
V
DD,MIN
DD,MIN
Version 1.4 July 2002
Max
6000
DD
100
100
150
4
Direct RDRAM
b
V
V
Min
Note*
Max
DD
DD
100
-
-
(800MHz,
+0.3
+1.0
-40/-45)
620(x18)
575(x16)
560(x18)
530(x16)
Max
6000
120
80
80
4
Max
200
332
a
Unit
°C
°C
V
V
Unit
mA
mA
Unit
mA
mA
mA
mA
µA
mA
mA
™