K6X0808C1D-TF55

Manufacturer Part NumberK6X0808C1D-TF55
ManufacturerSamsung
K6X0808C1D-TF55 datasheets
 


Specifications of K6X0808C1D-TF55

Date_code06+  
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K6X0808C1D Family
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level: 0.8 to 2.4V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): C
=100pF+1TTL
L
C
=50pF+1TTL
L
AC CHARACTERISTICS
(Vcc=4.5~5.5V, Commercial product: T
Parameter List
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Read
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
1. The parameter is tested with 50pF test load.
DATA RETENTION CHARACTERISTICS
Item
Symbol
Vcc for data retention
V
DR
Data retention current
I
DR
Data retention set-up time
t
SDR
Recovery time
t
RDR
1)
C
L
1. Including scope and jig capacitance
=0 to 70 C, Industrial product: T
A
Symbol
Min
t
55
RC
t
-
AA
t
-
CO
t
-
OE
t
10
LZ
t
5
OLZ
t
0
HZ
t
0
OHZ
t
10
OH
t
55
WC
t
45
CW
t
0
AS
t
45
AW
t
40
WP
t
0
WR
t
0
WHZ
t
25
DW
t
0
DH
t
5
OW
Test Condition
CS Vcc-0.2V
K6X0808C1D-F
Vcc=3.0V, CS Vcc-0.2V
K6X0808C1D-Q
See data retention waveform
5
CMOS SRAM
=-40 to 85 C)
A
Speed Bins
Units
70ns
55
1)
ns
Max
Min
Max
-
70
-
ns
55
-
70
ns
55
-
70
ns
25
-
35
ns
-
10
-
ns
-
5
-
ns
20
0
30
ns
20
0
30
ns
-
10
-
ns
-
70
-
ns
-
60
-
ns
-
0
-
ns
-
60
-
ns
-
50
-
ns
-
0
-
ns
20
0
25
ns
-
30
-
ns
-
0
-
ns
-
5
-
ns
Min
Typ
Max
Unit
2.0
-
5.5
V
-
-
10
A
-
-
20
0
-
-
ms
5
-
-
Revision 1.0
December 2003