K4T1G164QE-HCF7 Samsung, K4T1G164QE-HCF7 Datasheet - Page 28

no-image

K4T1G164QE-HCF7

Manufacturer Part Number
K4T1G164QE-HCF7
Description
Manufacturer
Samsung
Datasheet

Specifications of K4T1G164QE-HCF7

Date_code
10+
K4T1G044QE
K4T1G084QE
K4T1G164QE
DQS
DQS
V
DDQ
V
(AC)min
IH
V
(DC)min
IH
V
(DC)
REF
V
(DC)max
IL
V
(AC)max
IL
nominal
line
V
SS
Setup Slew Rate
Falling Signal
Figure 7 - IIIustration of tangent line for tDS (differential DQS, DQS)
tDS
tDH
nominal
line
V
to ac
REF
region
tangent
line
∆TR
tangent line[V
Setup Slew Rate
=
∆TF
Rising Signal
tangent line[V
(DC) - V
(AC)max]
REF
IL
=
∆TF
28 of 45
DDR2 SDRAM
tDS
tDH
tangent
line
V
to ac
REF
region
(AC)min - V
(DC)]
IH
REF
∆TR
Rev. 1.1 December 2008

Related parts for K4T1G164QE-HCF7