M29W004BT STMicroelectronics, M29W004BT Datasheet

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M29W004BT

Manufacturer Part Number
M29W004BT
Description
TSOP40
Manufacturer
STMicroelectronics
Datasheets

Specifications of M29W004BT

Date_code
02+

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March 2000
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
– 10µs by Byte typical
11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
TEMPORARY BLOCK UNPROTECTION
MODE
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M29W004BT: EAh
– Bottom Device Code M29W004BB: EBh
Erase Suspend
Low Voltage Single Supply Flash Memory
Figure 1. Logic Diagram
4 Mbit (512Kb x8, Boot Block)
A0-A18
RP
W
G
E
19
M29W004BT
M29W004BB
V CC
V SS
TSOP40 (N)
10 x 20mm
M29W004BB
M29W004BT
8
DQ0-DQ7
RB
AI02954
1/20

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