74LV259DB,118 NXP Semiconductors, 74LV259DB,118 Datasheet

IC 8BIT ADDRESSABLE LATCH 16SSOP

74LV259DB,118

Manufacturer Part Number
74LV259DB,118
Description
IC 8BIT ADDRESSABLE LATCH 16SSOP
Manufacturer
NXP Semiconductors
Series
74LVr
Datasheet

Specifications of 74LV259DB,118

Logic Type
D-Type, Addressable
Circuit
1:8
Output Type
Standard
Voltage - Supply
1 V ~ 3.6 V
Independent Circuits
1
Delay Time - Propagation
36ns
Current - Output High, Low
6mA, 6mA
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
16-SSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
74LV259DB-T
74LV259DB-T
935166060118
1. General description
2. Features
The 74LV259 is a low-voltage Si-gate CMOS device that is pin and function compatible
with 74HC259 and 74HCT259. The 74LV259 is a high-speed 8-bit addressable latch
designed for general purpose storage applications in digital systems. The 74LV259 is
multifunctional device capable of storing single-line data in eight addressable latches, and
also 3-to-8 decoder and demultiplexer, with active HIGH outputs (Q0 to Q7), functions are
available. The 74LV259 also incorporates an active LOW common reset (MR) for resetting
all latches, as well as, an active LOW enable input (LE).
The 74LV259 has four modes of operation as shown in the mode select table. In the
addressable latch mode, data on the data line (D) is written into the addressed latch. The
addressed latch will follow the data input with all non-addressed latches remaining in their
previous states. In the memory mode, all latches remain in their previous states and are
unaffected by the data or address inputs. In the 3-to-8 decoding or demultiplexing mode,
the addressed output follows the state of the (D) input with all other outputs in the LOW
state. In the reset mode all outputs are LOW and unaffected by the address (A0 to A2)
and data (D) input. When operating the 74LV259 as an address latch, changing more than
one bit of address could impose a transient-wrong address. Therefore, this should only be
done while in the memory mode.
74LV259
8-bit addressable latch
Rev. 03 — 2 January 2008
Optimized for low voltage applications: 1.0 V to 3.6 V
Accepts TTL input levels between V
Typical output ground bounce < 0.8 V at V
Typical HIGH-level output voltage (V
T
Combines demultiplexer and 8-bit latch
Serial-to-parallel capability
Output from each storage bit available
Random (addressable) data entry
Easily expandable
Common reset input
Useful as a 3-to-8 active HIGH decoder
ESD protection:
Multiple package options
Specified from 40 C to +85 C and from 40 C to +125 C
amb
HBM JESD22-A114E exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
= 25 C
CC
OH
) undershoot: > 2 V at V
= 2.7 V and V
CC
= 3.3 V and T
CC
= 3.6 V
amb
= 25 C
CC
Product data sheet
= 3.3 V and

Related parts for 74LV259DB,118

74LV259DB,118 Summary of contents

Page 1

Rev. 03 — 2 January 2008 1. General description The 74LV259 is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC259 and 74HCT259. The 74LV259 is a high-speed 8-bit addressable latch designed ...

Page 2

... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name 74LV259N +125 C 74LV259D +125 C 74LV259DB +125 C 74LV259PW +125 C 74LV259BQ +125 C 4. Functional diagram 001aah118 Fig 1. Logic symbol 74LV259_3 Product data sheet Description DIP16 plastic dual in-line package; 16 leads (300 mil) SO16 plastic small outline package ...

Page 3

... NXP Semiconductors Fig 3. Functional diagram 5. Pinning information 5.1 Pinning 74LV259 GND Fig 4. Pin configuration DIP16, SO16 and (T)SSOP16 5.2 Pin description Table 2. Pin description Symbol Pin GND 8 Q[0: 10, 11, 12 74LV259_3 Product data sheet DECODER LATCHES 001aah127 (1) The die substrate is attached to this pad using Fig 5. Pin confi ...

Page 4

... NXP Semiconductors Table 2. Pin description …continued Symbol Pin Functional description Table 3. Mode select table H = HIGH voltage level LOW voltage level Table 4. Function table H = HIGH voltage level LOW voltage level don’t care High or LOW data one set-up time prior to the LOW-to-HIGH LE transition; q<n> = state of the output established during the last cycle in which it was addressed or cleared ...

Page 5

... NXP Semiconductors 7. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current IK I output clamping current OK I output current O I supply current CC I ground current ...

Page 6

... NXP Semiconductors 9. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I supply current CC I additional supply current ...

Page 7

... NXP Semiconductors 10. Dynamic characteristics Table 8. Dynamic characteristics GND = 0 V; For test circuit see Figure Symbol Parameter Conditions t propagation delay D to Qn; see propagation delay An to Qn; see propagation delay HIGH to LOW MR to Qn; PHL propagation delay pulse width LE, HIGH or LOW; see pulse width MR, LOW ...

Page 8

... NXP Semiconductors Table 8. Dynamic characteristics GND = 0 V; For test circuit see Figure Symbol Parameter Conditions t set-up time LE; see su Figure hold time D to LE; see hold time An to LE; see power dissipation capacitance V = GND [1] Typical values are measured the same as t and PLH ...

Page 9

... NXP Semiconductors 11. Waveforms D input LE input Qn output Measurement points are given in V and V are typical voltage output levels that occur with the output load Fig 6. The enable input (LE) to output (Qn) propagation delays and the enable input pulse width Measurement points are given in ...

Page 10

... NXP Semiconductors Measurement points are given in V and V are typical voltage output levels that occur with the output load Fig 9. The conditional reset input (MR) to output (Qn) propagation delays LE input D input Qn output Measurement points are given in V and V are typical voltage output levels that occur with the output load. ...

Page 11

... NXP Semiconductors Table 9. Measurement points Supply voltage V CC < 2 3.6 V Test data is given in Table 10. Definitions test circuit Termination resistance should be equal to output impedance Load resistance Load capacitance including jig and probe capacitance. L Fig 12. Load circuit for switching times Table 10. ...

Page 12

... NXP Semiconductors 12. Package outline DIP16: plastic dual in-line package; 16 leads (300 mil pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions UNIT max. min. max. mm 4.2 0.51 3.2 inches 0.17 0.02 0.13 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. ...

Page 13

... NXP Semiconductors SO16: plastic small outline package; 16 leads; body width 3 pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

Page 14

... NXP Semiconductors SSOP16: plastic shrink small outline package; 16 leads; body width 5 pin 1 index 1 e DIMENSIONS (mm are the original dimensions) A UNIT max. 0.21 1. 0.25 0.05 1.65 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION IEC SOT338-1 Fig 15. Package outline SOT338-1 (SSOP16) ...

Page 15

... NXP Semiconductors TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4 pin 1 index 1 DIMENSIONS (mm are the original dimensions) A UNIT max. 0.15 0.95 mm 1.1 0.25 0.05 0.80 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. ...

Page 16

... NXP Semiconductors DHVQFN16: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 16 terminals; body 2.5 x 3.5 x 0.85 mm terminal 1 index area terminal 1 index area DIMENSIONS (mm are the original dimensions) (1) A UNIT max. 0.05 0. 0.2 0.00 0.18 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. ...

Page 17

... Document ID Release date 74LV259_3 20080102 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section • Section • ...

Page 18

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 19

... NXP Semiconductors 17. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 5 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 5.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Functional description . . . . . . . . . . . . . . . . . . . 4 7 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 11 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 14 Revision history ...

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