GS8160Z36BGT-150 GSI Technology, GS8160Z36BGT-150 Datasheet

GS8160Z36BGT-150

Manufacturer Part Number

GS8160Z36BGT-150

Description

Manufacturer

GSI Technology

Datasheet

1.GS8160Z18BGT-150I.pdf (23 pages)

Specifications of GS8160Z36BGT-150

Pack_quantity

Comm_code

85423245

Lead_time

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

GS8160Z36BGT-150T

Manufacturer:

GSI

Quantity:

20 000

Current page: 1 of 23
Download datasheet (916Kb)

100-Pin TQFP

Commercial Temp

Industrial Temp

Features

• NBT (No Bus Turn Around) functionality allows zero wait

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• User-configurable Pipeline and Flow Through mode

• LBO pin for Linear or Interleave Burst mode

• Pin compatible with 2M, 4M, and 8M devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

• JEDEC-standard 100-lead TQFP package

• RoHS-compliant 100-lead TQFP package available

Functional Description

The GS8160Z18/36BT is an 18Mbit Synchronous Static

SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or

other pipelined read/double late write or flow through read/

single late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

Rev: 1.05 11/2005

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

read-write-read bus utilization; Fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

Flow Through

Pipeline

3-1-1-1

2-1-1-1

18Mb Pipelined and Flow Through

Synchronous NBT SRAM

Curr

tCycle

Parameter Synopsis

(x18)

(x36)

(x18)

(x36)

1/23

Because it is a synchronous device, address, data inputs, and

read/ write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

The GS8160Z18/36BT may be configured by the user to

operate in Pipeline or Flow Through mode. Operating as a

pipelined synchronous device, meaning that in addition to the

rising edge triggered registers that capture input signals, the

device incorporates a rising-edge-triggered output register. For

read cycles, pipelined SRAM output data is temporarily stored

by the edge triggered output register during the access cycle

and then released to the output drivers at the next rising edge of

clock.

The GS8160Z18/36BT is implemented with GSI's high

performance CMOS technology and is available in a JEDEC-

standard 100-pin TQFP package.

-250

295

345

225

255

2.5

4.0

5.5

-200

245

285

200

220

3.0

5.0

6.5

-150

200

225

185

205

3.8

6.7

7.5

GS8160Z18/36BT-250/200/150

Unit

250 MHz–150 MHz

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

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