GS841Z36AT-100 GSI Technology, GS841Z36AT-100 Datasheet

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GS841Z36AT-100

Manufacturer Part Number
GS841Z36AT-100
Description
TQFP 100
Manufacturer
GSI Technology
Datasheet

Specifications of GS841Z36AT-100

Pack_quantity
72
Comm_code
85423245
Lead_time
994
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• 256K x 18 and 128K x 36 configurations
• User-configurable Pipelined and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
• Fully pin-compatible with both pipelined and flow through
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• Clock Control, registered, address, data, and control
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available
Functional Description
The GS841Z18/36AT is a 4Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Rev: 1.02 11/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NtRAM™, NoBL™ and ZBT™ SRAMs
Through
Pipeline
3-1-1-1
2-1-1-1
4Mb Pipelined and Flow Through
Flow
Synchronous NBT SRAMs
tCycle
tCycle
t
I
t
I
KQ
DD
KQ
DD
Parameter Synopsis
335 mA
210 mA
1/30
5.5 ns
3.2 ns
9.1 ns
–180
8 ns
310 mA
190 mA
6.0 ns
3.5 ns
8.5 ns
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS841Z18/36AT may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS841Z18/36AT is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
Standard 100-pin TQFP package.
10 ns
–166
280 mA
165 mA
6.6 ns
3.8 ns
10 ns
12 ns
–150
GS841Z18/36AT-180/166/150/100
190 mA
135 mA
4.5 ns
10 ns
12 ns
15 ns
–100
2.5 V and 3.3 V V
© 2001, GSI Technology
180 MHz–100 MHz
3.3 V V
DDQ
DD

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