AGR18045E TRIQUINT [TriQuint Semiconductor], AGR18045E Datasheet - Page 2

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AGR18045E

Manufacturer Part Number
AGR18045E
Description
45 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
Manufacturer
TRIQUINT [TriQuint Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AGR18045EF
Manufacturer:
ASI
Quantity:
20 000
4
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
Table 4. dc Characteristics
Table 5. RF Characteristics
* Across full DCS band, 1.805 GHz—1.880 GHz.
Drain-source Breakdown Voltage (V
Gate-source Leakage Current (V
Zero Gate Voltage Drain Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Gate Quiescent Voltage (V
Drain-source On-voltage (V
Drain-to-gate Capacitance
Drain-to-source Capacitance
Power Gain
Drain Efficiency
EDGE Linearity Characterization
Output Power
n I
Ruggedness
5
(V
(V
(V
(V
(P
(V
(V
VSWR = 10:1 [all angles])
p
W
t u
M
M
DS
DS
DS
DS
OUT
DS
DS
,
o
o
R
1
d
d
= 26 V, V
= 26 V, V
= 26 V, P
= 26 V, P
= 26 V, 1 dB gain compression, I
= 26 V, P
e
8 .
l u
l u
= 15 W, f = 1.840 GHz, V
u t
t a
t a
0
n r
5
o i
o i
G
n
n
L
o
s
s
H
s s
p
p
GS
GS
OUT
OUT
OUT
z
e
e
t c
t c
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
u r
u r
1
= 15 W, I
= 15 W, I
= 45 W, I
8 .
m
m
8
@
@
0
Functional Tests* (in Agere Systems Supplied Test Fixture)
DS
DS
G
GS
±
±
P
P
4
6
H
DQ
DQ
DQ
= 10 V, I
a
= 26 V, I
a
DS
0
0
= 10 V, I
a r
, z
a r
0
0
GS
= 400 mA)
= 400 mA)
= 400 mA,
m
m
= 10 V, I
k
k
DS
L
H
H
t e
D
t e
GS
= 5 V, V
z
z
= 26 V, I
M
r e
r e
D
D
D
O
= 0 V, I
DQ
= 150 µA)
= 400 mA)
= 0.5 A)
S
D
= 400 mA)
R
= 0.4 A)
DS
Dynamic Characteristics
DS
(in Supplied Test Fixture)
DQ
F
D
Off Characteristics
On Characteristics
= 0 V)
P
= 200
= 26 V, V
= 38 µA)
= 400 mA)
o
w
r e
T
a r
GS
n
= 0 V)
i s
t s
r o
V
S
S
V
C
V
V
C
C
P1dB
y
(BR)DSS
y
GS(TH)
DS(ON)
I
R I
I
G
= 30 °C.
GS(Q)
m
G
GSS
DSS
OSS
RSS
m
η
ψ
FS
L
L
b
b
l o
l o
No degradation in output
power.
M
M
3.8
65
n i
n i
T
0.22
1.0
T
24
15
32
49
3.2
y
6
7
1
y
p
3
3
2
p
M
M
1.5
4.8
75
a
4
a
x
x
µAdc
µAdc
U
d
d
U
Vdc
Vdc
Vdc
Vdc
pF
pF
dB
d
W
%
B
B
n
S
B
n
t i
c
c
t i

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