CYIL1SM1300AA_09 CYPRESS [Cypress Semiconductor], CYIL1SM1300AA_09 Datasheet - Page 2

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CYIL1SM1300AA_09

Manufacturer Part Number
CYIL1SM1300AA_09
Description
LUPA-1300 1.3 MPxl High Speed CMOS Image Sensor
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
Specifications
General Specifications
Table 1. General Specifications of the LUPA Sensor
Electro-Optical Characteristics
Overview
Table 2. Electrical-Optical Specifications of the LUPA-1300 Sensor
Document Number: 38-05711 Rev. *D
Pixel Architecture
Pixel Size
Resolution
Pixel Rate
Shutter Type
Full Frame Rate
Package
FPN
PRNU
Conversion Gain
Output Signal
Amplitude
Saturation Charge
Sensitivity
Fill Factor
Peak QE * FF
Peak SR * FF
MTF
Temporal Noise
S/N Ratio
Spectral Sensitivity
Range
Parasitic Light
Sensitivity
Power Dissipation
Output Impedance
Parameter
Parameter
Pipelined Snapshot Shutter
6T-pixel
14 µm x 14 μm
1280 x1024
640 MHz
450 frames/second
Pin Grid Array 145 Pins
<3% RMS
2% RMS
16 µV/electron
1V
62.500 e-
1500 V.m2/W.s
8.33 V/lµx.s
21.43 V/lµx.s
50%
15%
0.08 A/W
X: 67%
Y: 66%
1330
400 - 1000 nm
< 0.5%
900 mWatt
200-300 Ω
45e-
Specification
Specification
The resolution and pixel size results in a 17.9 mm x 14.3 mm optical active
area.
Full snapshot shutter with variable integration time.
Frame rate increase possible with ROI read out and/or sub sampling.
PGA pins with 0.46 mm diameter.
Based on the high-fill factor active pixel sensor technology of FillFactory.
Using a 20 MHz system clock and 16 parallel outputs.
<10% p/p.
Half saturation.
Unity gain.
Is more then 60.000 (=1V/16µV/e-) due to non-linearity in saturated region.
Average white light.
Visible band only (180 lx = 1 W/m2).
Visible + NIR (70 lx = 1 W/m2).
100%-metal and polycide coverage.
See spectral response curve.
At Nyquist.
Dark environment, measured at T=21
1330 = 60000:45 = 62 dB.
i.e., sensitivity of the storage node compared to the sensitivity of photodiode.
Typical.
Typical.
Remarks
Remarks
o
C.
CYIL1SM1300AA
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