STPS10150C_06 STMICROELECTRONICS [STMicroelectronics], STPS10150C_06 Datasheet

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STPS10150C_06

Manufacturer Part Number
STPS10150C_06
Description
High voltage power Schottky rectifier
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Main product characteristics
Features and benefits
Description
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power Supplies.
Table 1.
1.
June 2006
Symbol
I
F(RMS)
V
I
P
dV/dt
HIgh junction temperature capability
Good trade off between leakage current and
forward voltage drop
Low leakage current
Avalanche capability specified
Insulated package
– TO-220FPAB
I
F(AV)
dPtot
---------------
T
FSM
RRM
ARM
dTj
T
stg
j
Insulating voltage = 2000 V
Typical package capacitance 12 pF
<
V
------------------------- -
Rth j a
V
F
I
F(AV)
(max)
Repetitive peak reverse voltage
RMS forward voltage
Average forward current
δ = 0.5
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
RRM
T
(
1
j
Absolute ratings (limiting values)
)
condition to avoid thermal runaway for a diode on its own heatsink
2 x 5 A
175° C
0.75 V
150 V
TO-220AB
D
TO-220FPAB
2
PAK
Parameter
High voltage power Schottky rectifier
(1)
Rev 6
T
T
t
t
p
p
Order Codes
C
C
= 10 ms sinusoidal
= 1 µs T
= 155° C
= 145° C
STPS10150CG-TR
STPS10150CG
A1
A2
STPS10150CFP
STPS10150CG
STPS10150CT
Part Number
K
D
2
j
PAK
= 25° C
A1
A2
Per diode
Per device
K
STPS10150C
-65 to + 175
STPS10150CFP
STPS10150CFP
STPS10150CG
STPS10150CG
STPS10150CT
STPS10150CT
TO-220FPAB
10000
Value
3100
TO-220AB
150
120
175
Marking
10
10
5
A1
www.st.com
A1
K
K
A2
V/µs
Unit
A2
° C
° C
W
V
A
A
A
1/9
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STPS10150C_06 Summary of contents

Page 1

Main product characteristics I F(AV) V RRM (max) F Features and benefits ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ ...

Page 2

Characteristics 1 Characteristics Table 2. Thermal resistance Symbol R Junction to case th(j-c) R Coupling th(c) When the diodes 1 and 2 are used simultaneously: ∆T (diode 1) = P(diode Table 3. Static electrical characteristics (per diode) ...

Page 3

STPS10150C Figure 3. Normalized avalanche power derating versus pulse duration ARM p P (1µs) ARM 1 0.1 0.01 t (µs) p 0.001 0.01 0.1 1 Figure 5. Non repetitive surge peak forward current versus overload duration - ...

Page 4

Characteristics Figure 9. Reverse leakage current versus reverse voltage applied (typical values, per diode) I (µA) R 1E+5 Tj=175°C 1E+4 Tj=150°C 1E+3 Tj=125°C 1E+2 1E+1 Tj=75°C 1E+0 Tj=25°C 1E-1 V ( Figure 11. Forward ...

Page 5

STPS10150C 2 Package information Epoxy meets UL94, V0. 2 Table 4. D PAK Dimensions Figure 14. D PAK footprint dimensions (in mm 2.0 MIN. FLAT ...

Page 6

Package information Table 5. TO-220AB Dimensions H2 Dia 6/9 Ref Diam. STPS10150C Dimensions Millimeters Inches Min. Max. Min. A 4.40 4.60 0.173 C 1.23 ...

Page 7

STPS10150C Table 6. TO-220FPAB Dimensions order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked ...

Page 8

Ordering information 3 Ordering information Ordering type STPS10150CT STPS10150CG STPS10150CG-TR STPS10150CFP 4 Revision history Date Jul-2003 19-Jun-2006 8/9 Marking Package STPS10150CT TO-220AB 2 STPS10150CG D PAK 2 STPS10150CG D PAK STPS10150CFP TO-220FPAB Revision 5B Last update. Reformatted to current standard. ...

Page 9

STPS10150C Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at ...

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