K9F1208U0M- SAMSUNG [Samsung semiconductor], K9F1208U0M- Datasheet

K9F1208U0M-

Manufacturer Part Number

K9F1208U0M-

Description

64M x 8 Bit NAND Flash Memory

Manufacturer

SAMSUNG [Samsung semiconductor]

Datasheet

1.K9F1208U0M-.pdf (41 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

K9F1208U0M-PCB0

Manufacturer:

SAMSUNG

Quantity:

12 740

Current page: 1 of 41
Download datasheet (2Mb)

K9F1208U0M-YCB0, K9F1208U0M-YIB0

Document Title

Revision History

64M x 8 Bit NAND Flash Memory

Revision No

0.0

0.1

0.2

0.3

0.4

History

1. Initial issue

1. Renamed GND input (pin # 6) on behalf of SE (pin # 6)

2. Updated operation for tRST timing

1. Changed GND input (pin # 6) pin to N.C ( No Connection).

1. Changed plane address in Copy-Back Program

1. Changed DC characteristics

2. Unified access timing parameter definition for multiple operating modes

- AC characteristics (After)

ALE to RE Delay( ID read )

CE to RE Delay( ID read)

RE Low to Status Output

CE Low to Status Output

RE access time(Read ID)

ALE to RE Delay( ID read )

CE Access Time

- Changed AC characteristics (Before)

- The SE input controls the access of the spare area. When SE is high,

- If reset command(FFh) is written at Ready state, the device goes into

- The pin # 6 is don’t-cared regardless of external logic input level

Operating

A24 and A25

. Deleted t

the spare area is not accessible for reading or programming. SE is rec

ommended to be coupled to GND or Vcc and should not be toggled

during reading or programming.

=> Connect this input pin to GND or set to static low state unless the

sequential read mode excluding spare area is used.

Busy for maximum 5us.

and is fixed as low internally.

Current

A14 and A15

Parameter

Sequential Read

Program

Erase

must be the same between source and target page

RSTO,

must be the same between source and target page

CSTO

and t

READID

Symbol

READID

RSTO

CSTO

Min

CEA

AR1

/ Added t

Typ

Min

100

Min

CEA

20->30

Max

Unit

FLASH MEMORY

Draft Date

Oct. 27th 2000

Dec. 5th 2000

Dec. 15th 2000

Jan. 8th 2001

Apr. 7th 2001

Remark

Advanced

Information

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