K9F1208U0M- SAMSUNG [Samsung semiconductor], K9F1208U0M- Datasheet - Page 16

• Manufacturer Part Number: K9F1208U0M-
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208U0M-YCB0, K9F1208U0M-YIB0
Erase Flow Chart
NAND Flash Technical Notes (Continued)
*
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Block Replacement
Erase Error
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
1st
(n-1)th
nth
(page)
1st
(n-1)th
nth
(page)
No
an error occurs.
Read Status Register
Write Block Address
Block A
Block B
Erase Completed
or R/B = 1 ?
I/O 0 = 0 ?
I/O 6 = 1 ?
Write D0h
Write 60h
Start
Yes
Yes
2
Buffer memory of the controller.
1
No
16
Reclaim the Error
Read Flow Chart
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00h
Start
Yes