K9F1208U0M- SAMSUNG [Samsung semiconductor], K9F1208U0M- Datasheet - Page 3

• Manufacturer Part Number: K9F1208U0M-
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208U0M-YCB0, K9F1208U0M-YIB0
Revision No
0.5
0.6
0.7
History
1. Addition of new operation : Multi-Plane Copy-Back Program.
1.Powerup sequence is added
: Recovery time of minimum 1 s is required before internal circuit gets
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
1. Copy-Back Program(Dummy) is added in Command sets table.
Note 2. Page Program(True) and Copy-Back Program(True) are available on 1 plane
ready for any command sequences
Page Program (True)
Page Program (Dummy)
Copy-Back Program(True)
Page Program (True)
Page Program (Dummy)
Copy-Back Program(True)
Copy-Back Program(Dummy)
- Multi-Plane Copy-Back Program is extended operation of one-page
=> After successive reading of multiple 528 byte data set at the source
Copy-Back program.
planes, the above data are moved to internal page registers and same
procedure as Multi-Plane Page Programming is executed.
V
WP
WE
CC
Page Program(Dummy) and Copy-Back Program(Dummy) are available on
operation.
the 2nd,3rd,4th plane of multi plane operation.
Function
Function
~ 2.5V
(2)
1 s
(2)
(2)
High
(2)
Cycle
Cycle
1st.
1st.
80h
80h
00h
80h
80h
00h
03h
3
Cycle
Cycle
2nd.
2nd.
8Ah
8Ah
8Ah
10h
11h
10h
11h
(before revision)
(after revision)
~ 2.5V
11h/10h
Cycle
Cycle
3rd.
3rd.
10h
10h
-
-
-
-
FLASH MEMORY
Draft Date
May. 30th 2001
Jul. 23th 2001
Aug. 23th 2001
Remark
Preliminary